The operation of semiconductor devices is based on charge transport, ie on the motion of
free carriers in the conduction and valence bands. Under the effect of applied external forces …

Process fluctuations can significantly affect the yield of millimeter-wave circuits based on
submicrometer semiconductor processes. A yield-improvement design that incorporates …

Process-induced variability is a growing concern in the design of analog circuits, and in
particular for monolithic microwave integrated circuits (MMICs) targeting the 5G and 6G …

We present a novel and numerically efficient approach to analyse the sensitivity of AC
parameters to variations of traps in GaN HEMTs. The approach exploits an in-house TCAD …

An accurate, yet computationally efficient, computer-aided design (CAD) framework is
proposed for the concurrent variability analysis of the active and a passive part of a radio …

We present here and in the companion paper (Part II) a general framework for the modeling
of semiconductor device variability through the physics-based analysis of the small-change …

We propose various techniques extending X parameters to include the effect of active
microwave device variability by exploiting TCAD simulations. We discuss two possible …

We present here an efficient numerical approach for the concurrent evaluation of the small-
change deterministic device parameters and of the relevant Green's functions exploited in …

The paper presents a review on physics-based noise simulation techniques for RF
semiconductor devices, starting with the small-signal case but with greater stress on noise in …

We present an efficient numerical technique for the temperature-dependent TCAD analysis
of semiconductor devices. The approach is based on the linearization of the physical model …