A high-performance and energy-efficient ternary multiplier using CNTFETs

E Abbasian, S Sofimowloodi - Arabian Journal for Science and …, 2023 - Springer
Internet-of-things-based embedded systems depend on batteries as an energy resource,
and thus, require energy-efficient circuits for prolonged operation. To achieve energy …

An efficient GNRFET-based circuit design of ternary half-adder

E Abbasian, M Orouji, ST Anvari - AEU-International Journal of Electronics …, 2023 - Elsevier
Attaining low energy consumption in digital circuits design is a main task for designers
because emerging applications are based on batteries and face limited-energy. Designing …

An ultra‐low power and energy‐efficient ternary Half‐Adder based on unary operators and two ternary 3: 1 multiplexers in 32‐nm GNRFET technology

E Abbasian, M Orouji… - … Journal of Circuit …, 2023 - Wiley Online Library
Summary Internet‐of‐Things (IoTs)‐based embedded systems require energy‐efficient
designs for long‐term operation. To achieve energy‐efficient designs, multiple‐valued logic …

A CNTFET based stable, single-ended 7T SRAM cell with improved write operation

A Sachdeva, K Sharma, A Bhargava… - Physica Scripta, 2024 - iopscience.iop.org
Many researchers are working to improve the write operation in SRAM bit-cell for better write
stability, low power dissipation, and minimal access time during the write process. However …

Read Improved and Low Leakage Power CNTFET Based Hybrid 10t SRAM Cell for Low Power Applications

M Elangovan, K Sharma, A Sachdeva… - Circuits, Systems, and …, 2024 - Springer
Static random access memory (SRAM) cell design has undergone extensive development to
achieve good performance and low power consumption. This paper introduces an SRAM …

[HTML][HTML] Single ended 12T cntfet sram cell with high stability for low power smart device applications

S Jayanthi, P Raja, M Elangovan… - e-Prime-Advances in …, 2024 - Elsevier
Static random-access memory (SRAM) is the most prevalent type of memory used in current
system-on-chips (SOC). SRAMs built using Complementary metal oxide semiconductor …

Design of power efficient and reliable hybrid inverter approach based 11 T SRAM design using GNRFET technology

M Elangovan, K Sharma, HA Mahmoud… - … -International Journal of …, 2024 - Elsevier
Designing a power efficient and high-speed static random-access memory (SRAM) cell with
improved noise stability using traditional complementary metal oxide semiconductor …

[PDF][PDF] High-Stability and High-Speed 11T CNTFET SRAM Cell for MIMO Applications

M Elangovan, G Saravanan, S Jayanthi… - Journal of Circuits …, 2023 - researchgate.net
M. Elangovan et al. and 5.5225 e-12s, respectively. The parameters of the proposed cell are
compared with 6T SRAM [M. Elangovan and K. Gunavathi, Stability analysis of 6T CNTFET …

A Study on the Design Method of Hybrid MOSFET-CNTFET Based SRAM–A Secondary Publication

G Cho - Journal of Electronic Research and Application, 2024 - ojs.bbwpublisher.com
More than 10,000 carbon nanotube field-effect transistors (CNTFETs) have been
successfully integratedinto one semiconductor chip using conventional semiconductor …

하이브리드MOSFET-CNTFET 기반SRAM 디자인방법에관한연구

조근호 - 전기전자학회논문지, 2023 - dbpia.co.kr
높은 캐리어 이동도, 큰 포화 속도, 낮은 고유 정전 용량, 유연성, 그리고 투명성을 장점으로 가진
CNTFET (Carbon NanoTube Field Effect Transistor) 10,000 개 이상을 현존하는 반도체 …