A high-performance and energy-efficient ternary multiplier using CNTFETs
E Abbasian, S Sofimowloodi - Arabian Journal for Science and …, 2023 - Springer
Internet-of-things-based embedded systems depend on batteries as an energy resource,
and thus, require energy-efficient circuits for prolonged operation. To achieve energy …
and thus, require energy-efficient circuits for prolonged operation. To achieve energy …
An efficient GNRFET-based circuit design of ternary half-adder
E Abbasian, M Orouji, ST Anvari - AEU-International Journal of Electronics …, 2023 - Elsevier
Attaining low energy consumption in digital circuits design is a main task for designers
because emerging applications are based on batteries and face limited-energy. Designing …
because emerging applications are based on batteries and face limited-energy. Designing …
An ultra‐low power and energy‐efficient ternary Half‐Adder based on unary operators and two ternary 3: 1 multiplexers in 32‐nm GNRFET technology
E Abbasian, M Orouji… - … Journal of Circuit …, 2023 - Wiley Online Library
Summary Internet‐of‐Things (IoTs)‐based embedded systems require energy‐efficient
designs for long‐term operation. To achieve energy‐efficient designs, multiple‐valued logic …
designs for long‐term operation. To achieve energy‐efficient designs, multiple‐valued logic …
A CNTFET based stable, single-ended 7T SRAM cell with improved write operation
Many researchers are working to improve the write operation in SRAM bit-cell for better write
stability, low power dissipation, and minimal access time during the write process. However …
stability, low power dissipation, and minimal access time during the write process. However …
Read Improved and Low Leakage Power CNTFET Based Hybrid 10t SRAM Cell for Low Power Applications
Static random access memory (SRAM) cell design has undergone extensive development to
achieve good performance and low power consumption. This paper introduces an SRAM …
achieve good performance and low power consumption. This paper introduces an SRAM …
[HTML][HTML] Single ended 12T cntfet sram cell with high stability for low power smart device applications
Static random-access memory (SRAM) is the most prevalent type of memory used in current
system-on-chips (SOC). SRAMs built using Complementary metal oxide semiconductor …
system-on-chips (SOC). SRAMs built using Complementary metal oxide semiconductor …
Design of power efficient and reliable hybrid inverter approach based 11 T SRAM design using GNRFET technology
Designing a power efficient and high-speed static random-access memory (SRAM) cell with
improved noise stability using traditional complementary metal oxide semiconductor …
improved noise stability using traditional complementary metal oxide semiconductor …
[PDF][PDF] High-Stability and High-Speed 11T CNTFET SRAM Cell for MIMO Applications
M Elangovan, G Saravanan, S Jayanthi… - Journal of Circuits …, 2023 - researchgate.net
M. Elangovan et al. and 5.5225 e-12s, respectively. The parameters of the proposed cell are
compared with 6T SRAM [M. Elangovan and K. Gunavathi, Stability analysis of 6T CNTFET …
compared with 6T SRAM [M. Elangovan and K. Gunavathi, Stability analysis of 6T CNTFET …
A Study on the Design Method of Hybrid MOSFET-CNTFET Based SRAM–A Secondary Publication
G Cho - Journal of Electronic Research and Application, 2024 - ojs.bbwpublisher.com
More than 10,000 carbon nanotube field-effect transistors (CNTFETs) have been
successfully integratedinto one semiconductor chip using conventional semiconductor …
successfully integratedinto one semiconductor chip using conventional semiconductor …
하이브리드MOSFET-CNTFET 기반SRAM 디자인방법에관한연구
조근호 - 전기전자학회논문지, 2023 - dbpia.co.kr
높은 캐리어 이동도, 큰 포화 속도, 낮은 고유 정전 용량, 유연성, 그리고 투명성을 장점으로 가진
CNTFET (Carbon NanoTube Field Effect Transistor) 10,000 개 이상을 현존하는 반도체 …
CNTFET (Carbon NanoTube Field Effect Transistor) 10,000 개 이상을 현존하는 반도체 …