US PATENT DOCUMENTS 5,326,711 A 7/1994 Malhi 5,346,834 A 9, 1994. Hisamoto et al.
4,326,332 A 4, 1982 Kenney et al. 5,349,224 A 9, 1994 Gilbert et al. 4,337,474 A 6, 1982 …

A semiconductor power device includes a substrate of a first conductivity type and an
epitaxial layer of the first conductivity type over and in contact with the substrate. A first …

(57) ABSTRACT A method of forming a monolithically integrated trench FET and Schottky
diode includes the following steps. Two trenches are formed extending through an upper …

(57) ABSTRACT A semiconductor device comprises a drain layer of first conductivity type,
drift layers of first and second conduc tivity types on the drain layer, an insulating film …

(57) ABSTRACT A trench-gate type semiconductor device that can prevent breakdown of a
gate insulating film caused by a displacement current flowing into a protective diffusion layer …

(57) ABSTRACT A power transistor includes a first semiconductor region of a first
conductivity type extending over and in contact with a second semiconductor region of the …

An ON-resistance of a semiconductor device including a vertical MOSFET whose source
electrode, gate electrode, and drain electrode are formed on a single Surface is reduced. A …

A semiconductor structure is formed as follows. A semiconductor region is formed to have a
P-type region and a N-type region forming a PN junction therebetween. A first trench is …

(57) ABSTRACT A semiconductor device having a semiconductor body, a Source
metallization arranged on a first Surface of the semi conductor body and a trench including a …

One embodiment according to the present inven tion includes a lateral MOS device
comprising a gate electrode disposed at least partially in a gate trench for applying a …