Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …

The detection of ionizing radiation such as X‐ray, γ‐ray, α‐particle, and neutrons has been
widely required in medical and industrial areas. Perovskite semiconductor detectors are …

In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes
(SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other …

Bands structure of nanocrystalline anatase (TiO 2) particles was investigated before and
after neutron irradiation (1.6× 10 15 n· cm− 2, 8× 10 15 n· cm− 2, 4× 10 16 n· cm− 2 and 2× …

Neutron personal dosimetry is necessary for the monitoring of exposed workers, not only in
nuclear industry and related activities but also in the growing number of neutron producing …

Semiconductor-based neutron-detectors are characterized by small size, high energy-
resolution, good spatial resolution, and stable response (at the depletion voltage) …

Despite advances toward improving the quality of p-type 4H-SiC substrates and layers, we
still have no model capable of accounting for the multitude of boron-related optical, junction …

Industry demand for radiation detectors that work at elevated temperatures is currently
growing. Detectors capable of operating at high temperatures are used in harsh …

This paper presents a theoretical study of the electronic and dynamic properties of silicon
vacancies and self-interstitials in 4H–SiC using hybrid density functional methods. Several …

We report on a bistable defect known as M-center, here introduced in n-type 4H-SiC by 2
MeV He ion implantation. Deep levels of the M-center are investigated by means of junction …