Enhancement of quantum cascade laser intersubband transitions via coupling to resonant discrete photonic modes of subwavelength gratings
M Mikulicz, M Rygała, T Smołka, M Janczak… - Optics …, 2023 - opg.optica.org
We present an optical spectroscopic study of InGaAs/AlInAs active region of quantum
cascade lasers grown by low pressure metal organic vapor phase epitaxy combined with …
cascade lasers grown by low pressure metal organic vapor phase epitaxy combined with …
Fourier-transformed photoreflectance and fast differential reflectance of HgCdTe layers. The issues of spectral resolution and Fabry–Perot oscillations
Fourier-transformed photoreflectance and fast differential reflectance (FDR) spectroscopies
have been used to investigate the optical properties of HgCdTe layers of various …
have been used to investigate the optical properties of HgCdTe layers of various …
Interface intermixing in type II InAs/GaInAsSb quantum wells designed for active regions of mid-infrared-emitting interband cascade lasers
The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga 0.665 In 0.335 As x Sb 1−
x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical …
x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical …
Investigation of localized state emissions in quaternary InGaAsSb/AlGaAsSb multiple quantum wells grown by molecular beam epitaxy
H Jia, L Shen, X Li, Y Kang, X Fang, D Fang… - Optical Materials …, 2020 - opg.optica.org
As an essential structure of infrared semiconductor lasers, the optical properties of
InGaAsSb/AlGaAsSb multiple quantum wells need to be fully investigated. In this paper, the …
InGaAsSb/AlGaAsSb multiple quantum wells need to be fully investigated. In this paper, the …
[HTML][HTML] Importance of liquid phase epitaxy on achieving near-lattice-matched growth of In0. 145Ga0. 855As0. 132Sb0. 868 layers on GaSb (100) substrates
MA González-Morales, JJ Cruz-Bueno… - Superficies y …, 2022 - scielo.org.mx
We report the growth of In0. 145Ga0. 855As0. 132Sb0. 868 layers on GaSb (100) substrates
by the liquid phase epitaxy (LPE) technique using the ramp-cooling method. We achieved a …
by the liquid phase epitaxy (LPE) technique using the ramp-cooling method. We achieved a …
Effect of annealing-induced interdiffusion on the electronic structure of mid infrared emitting GaInAsSb/AlGaInAsSb quantum wells
There has been investigated the effect of post-growth-annealing-induced interdiffusion
process, and hence interface intermixing, on the electronic structure of Ga 0.35 In 0.65 As …
process, and hence interface intermixing, on the electronic structure of Ga 0.35 In 0.65 As …
Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells: spectroscopic experiment versus 10-band k· p modeling
Optical transitions in GaAs 1− x N x/GaAs quantum wells (QWs) have been probed by two
complementary techniques, modulation spectroscopy in a form of photoreflectance and …
complementary techniques, modulation spectroscopy in a form of photoreflectance and …
Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers
Thermal quenching of photoluminescence has been measured for InAs/GaInSb broken gap
system quantum wells as a function of the thickness of the conduction and valence band …
system quantum wells as a function of the thickness of the conduction and valence band …
GaInAsSb/AlGa (In) AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes
In this paper, we present results of Fourier-transformed photoluminescence measurements
of quaternary GaInAsSb quantum wells with quinary AlGaInAsSb barriers grown on GaSb …
of quaternary GaInAsSb quantum wells with quinary AlGaInAsSb barriers grown on GaSb …
[PDF][PDF] Temperature dependence of photoluminescence from epitaxial InGaAs/GaAs quantum dots with high lateral aspect ratio
Hereby, we present a study of a thermal quenching of emission from self-assembled
epitaxial highly asymmetric quantum dots in InGaAs/GaAs material system for both …
epitaxial highly asymmetric quantum dots in InGaAs/GaAs material system for both …