Bias dependence of the MODFET intrinsic model elements values at microwave frequencies
B Hughes, PJ Tasker - IEEE Transactions on Electron Devices, 1989 - ieeexplore.ieee.org
S-parameters of MODFETs were measured versus bias instead of frequency with a special
feature of the HP8510 network analyzer. Figure of merit plots, f/sub T/, and f/sub max/, were …
feature of the HP8510 network analyzer. Figure of merit plots, f/sub T/, and f/sub max/, were …
Interfacial gate resistance in Schottky-barrier-gate field-effect transistors
H Rohdin, N Moll, CY Su, GS Lee - IEEE Transactions on …, 1998 - ieeexplore.ieee.org
We discuss in depth a previously overlooked component in the gate resistance R/sub g/of
Schottky-Barrier-Gate FETs, in particular, 0.1-/spl mu/m gate-length AlInAs/GaInAs …
Schottky-Barrier-Gate FETs, in particular, 0.1-/spl mu/m gate-length AlInAs/GaInAs …
[图书][B] High-speed electronics and optoelectronics: devices and circuits
S Prasad, H Schumacher, A Gopinath - 2009 - books.google.com
This authoritative account of electronic and optoelectronic devices operating at frequencies
greater than 1 GHz covers the concepts and fundamental principles of operation, and …
greater than 1 GHz covers the concepts and fundamental principles of operation, and …
Circuit simulation models for the high electron mobility transistor
HR Yeager, RW Dutton - IEEE transactions on electron devices, 1986 - ieeexplore.ieee.org
A three-terminal model is formulated for the high electron mobility transistor (HEMT) using
charge-voltage relationships derived from the Boltzmann transport. Emphasis is placed on …
charge-voltage relationships derived from the Boltzmann transport. Emphasis is placed on …
Performance of MODFET and MESFET, a comparative study including equivalent circuits using combined electromagnetic and solid-state simulator
SMS Imtiaz, SM El-Ghazaly - IEEE transactions on microwave …, 1998 - ieeexplore.ieee.org
A combined electromagnetic and solid-state (CESS) simulation model for the analysis of
submicrometer semiconductor devices including the electromagnetic-wave propagation …
submicrometer semiconductor devices including the electromagnetic-wave propagation …
Nonlinear parasitics in MODFETs and MODFET IV characteristics
P Roblin, L Rice, SB Bibyk… - IEEE transactions on …, 1988 - ieeexplore.ieee.org
A large-signal analysis of the source and drain resistance of MODFETs is reported. Velocity
saturation in the two-dimensional electron gas (2DEG) and hypothetical rectifying effects in …
saturation in the two-dimensional electron gas (2DEG) and hypothetical rectifying effects in …
Improved small-signal equivalent circuit model and large-signal state equations for the MOSFET/MODFET wave equation
P Roblin, SC Kang, WR Liou - IEEE Transactions on Electron …, 1991 - ieeexplore.ieee.org
A simple non-quasi-static small-signal equivalent circuit model is derived for the ideal
MOSFET wave equation under the gradual channel approximation. This equivalent circuit …
MOSFET wave equation under the gradual channel approximation. This equivalent circuit …
Analytic solution of the velocity-saturated MOSFET/MODFET wave equation and its application to the prediction of the microwave characteristics of MODFETs
An AC model for the saturated MODFET is reported. The MOSFET/MODFET wave equation
accounting for velocity saturation and channel length modulation is derived. An exact …
accounting for velocity saturation and channel length modulation is derived. An exact …
A technique for modelling S-parameters for HEMT structures as a function of gate bias
SJ Mahon, DJ Skellern, F Green - IEEE transactions on …, 1992 - ieeexplore.ieee.org
A physically based technique for modeling HEMT structure S-parameters is presented. The
core of the model is directly dependent on the HEMT wafer structure and the physical gate …
core of the model is directly dependent on the HEMT wafer structure and the physical gate …
Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications
An analytical model for determining intrinsic short-circuit admittance (Y) parameters of
AlGaN/GaN/AlGaN Double Heterostructure (DH) High Electron Mobility Transistor (HEMT) is …
AlGaN/GaN/AlGaN Double Heterostructure (DH) High Electron Mobility Transistor (HEMT) is …