An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR
O Jardel, F De Groote, T Reveyrand… - IEEE Transactions …, 2007 - ieeexplore.ieee.org
A large-signal electrothermal model for AlGaN/GaN HEMTs including gate and drain related
trapping effects is proposed here. This nonlinear model is well formulated to preserve …
trapping effects is proposed here. This nonlinear model is well formulated to preserve …
Measurement methodology for accurate modeling of SiC MOSFET switching behavior over wide voltage and current ranges
H Sakairi, T Yanagi, H Otake, N Kuroda… - … on Power Electronics, 2017 - ieeexplore.ieee.org
This paper presents two novel measurement methods to characterize silicon carbide (SiC)
MOSFET devices. The resulting data are utilized to significantly improve the extraction of a …
MOSFET devices. The resulting data are utilized to significantly improve the extraction of a …
[图书][B] Broadband RF and microwave amplifiers
A Grebennikov, N Kumar, BS Yarman - 2017 - books.google.com
Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio
frequency (RF) and microwave power amplifier design, including well-known historical and …
frequency (RF) and microwave power amplifier design, including well-known historical and …
A wideband multiharmonic empirical large-signal model for high-power GaN HEMTs with self-heating and charge-trapping effects
KS Yuk, GR Branner… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT)
utilizing an improved drain current (Ids) formulation with self-heating and charge-trapping …
utilizing an improved drain current (Ids) formulation with self-heating and charge-trapping …
Modeling GaN: powerful but challenging
L Dunleavy, C Baylis, W Curtice… - IEEE Microwave …, 2010 - ieeexplore.ieee.org
As GaN technology has developed, first in research laboratories and more recently in
multiple commercial device manufacturers, the demand for improved nonlinear models has …
multiple commercial device manufacturers, the demand for improved nonlinear models has …
A reliable model parameter extraction method applied to AlGaN/GaN HEMTs
In this paper, a reliable small-signal model parameter extraction method for GaN high
electron mobility transistor (HEMT) on Si substrate has been developed and validated with …
electron mobility transistor (HEMT) on Si substrate has been developed and validated with …
Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs
The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated
with DC, S, and LS measurements. Special attention was paid to improve the management …
with DC, S, and LS measurements. Special attention was paid to improve the management …
Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior
BW Nelson, AN Lemmon, BT DeBoi… - IEEE Open Journal …, 2020 - ieeexplore.ieee.org
Transient simulation of complex converter topologies is a challenging problem, especially in
detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor …
detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor …
RF class-S power amplifiers: State-of-the-art results and potential
A Wentzel, C Meliani, W Heinrich - 2010 IEEE MTT-S …, 2010 - ieeexplore.ieee.org
This paper reports recent results on a current-mode class-S power amplifier for the 450 MHz
band, based on GaN-HEMT MMICs. We achieve a peak output power of 8.7 W for a single …
band, based on GaN-HEMT MMICs. We achieve a peak output power of 8.7 W for a single …
A GaN HEMT global large-signal model including charge trapping for multibias operation
GP Gibiino, A Santarelli, F Filicori - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper presents a novel empirical model for gallium nitride on silicon carbide high-
electron mobility transistors. A global state-space formulation describes charge trapping …
electron mobility transistors. A global state-space formulation describes charge trapping …