A large-signal electrothermal model for AlGaN/GaN HEMTs including gate and drain related
trapping effects is proposed here. This nonlinear model is well formulated to preserve …

This paper presents two novel measurement methods to characterize silicon carbide (SiC)
MOSFET devices. The resulting data are utilized to significantly improve the extraction of a …

Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio
frequency (RF) and microwave power amplifier design, including well-known historical and …

A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT)
utilizing an improved drain current (Ids) formulation with self-heating and charge-trapping …

As GaN technology has developed, first in research laboratories and more recently in
multiple commercial device manufacturers, the demand for improved nonlinear models has …

In this paper, a reliable small-signal model parameter extraction method for GaN high
electron mobility transistor (HEMT) on Si substrate has been developed and validated with …

The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated
with DC, S, and LS measurements. Special attention was paid to improve the management …

Transient simulation of complex converter topologies is a challenging problem, especially in
detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor …

This paper reports recent results on a current-mode class-S power amplifier for the 450 MHz
band, based on GaN-HEMT MMICs. We achieve a peak output power of 8.7 W for a single …

This paper presents a novel empirical model for gallium nitride on silicon carbide high-
electron mobility transistors. A global state-space formulation describes charge trapping …