In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …

This article reviews the size-dependent structural properties of ion beam synthesized Co
nanoparticles (NPs) and the influence of ion irradiation on the size, shape, phase and …

Amorphous a-SiO 2 host-matrices were implanted with Sn-ions with and without posterior
thermal tempering at 900° C for 1 h in ambient air. X-ray photoelectron spectroscopy …

The mechanisms of the Er 3+ photoluminescence enhancement induced by ultrasmall Au
nanoclusters (made by less than 20 atoms) incorporated by low-fluence ion implantation into …

Tetragonal Sn nanoparticles of∼ 15 nm diameter are produced in Al 2 O 3 by direct Sn
implantation at room temperature. After thermal annealing at 1000 C in oxygen, the …

X-ray absorption fine structure (XAFS) is a powerful tool in the study of the local atomic
environment in condensed matter. It has been often applied to the study of semiconductor …

Nanocrystalline Sn particles have been formed in silica glass through 50 keV Sn−
implantation followed by annealing in N 2 at 650 C for 30 min. Samples prepared this way …

Samples of SiO2 (600 nm)/Si have been implanted with Sn ions (200 keV, 5× 1016 cm− 2
and 1× 1017 cm− 2) at room temperature and afterwards annealed at 800 and 900° C for 60 …

The growth of ruthenium (Ru) nanocrystals on the Si O 2 and Al 2 O 3 films has been
investigated using atomic layer deposition (ALD) method, indicating that much higher …

Sn nanoclusters are synthesized in 180 nm Si O 2 layers after ion implantation and heat
treatment. Annealings in N 2 ambient at high temperatures (T⩾ 700 C) lead to the formation …