The generation, manipulation, storage, and detection of single photons play a central role in
emerging photonic quantum information technology. Individual photons serve as flying …

Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing
phenomena. Examples include three-dimensional island formation, injection of dislocations …

The formation mechanisms of epitaxial GaN nanowires grown within a self-induced
approach by molecular-beam epitaxy have been investigated at the onset of the nucleation …

Scanning probe microscopy combined with selective wet chemical etching is employed to
quantitatively determine the full three-dimensional (3D) composition profiles of single …

The commonly accepted Stranski-Krastanow model, according to which island formation
occurs on top of a wetting layer (WL) of a certain thickness, predicts for the morphological …

We compare elastic relaxation and Si-Ge distribution in epitaxial islands grown on both pit-
patterned and flat Si (001) substrates. Anomalous x-ray diffraction yields that nucleation in …

A detailed investigation of plastic relaxation onset in heteroepitaxial SiGe islands on Si (001)
is presented. The strain field induced by a straight misfit-dislocation segment is modeled by …

Dislocation networks are one of the most principle sources deteriorating the performances of
devices based on lattice-mismatched heteroepitaxial systems. We demonstrate here a …

We present a theoretical investigation of plasticity onset and strain relaxation in Ge on Si
pillar-like, vertical heterostructures (VHEs). By means of linear elasticity theory solved by …

We simulate the morphological evolution of Ge microcrystals, grown out-of-equilibrium on
deeply patterned Si substrates, as resulting from surface diffusion driven by the tendency …