Progress in external quantum efficiency for III‐nitride based deep ultraviolet light‐emitting diodes
C Chu, K Tian, Y Zhang, W Bi… - physica status solidi (a …, 2019 - Wiley Online Library
AlGaN‐based deep ultraviolet light‐emitting diodes (DUV LEDs) are featured with small
size, DC driving, no environmental contamination etc., and they are now emerging as the …
size, DC driving, no environmental contamination etc., and they are now emerging as the …
On the hole injection for III-nitride based deep ultraviolet light-emitting diodes
The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and
the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission …
the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission …
Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes
ZH Zhang, SW Huang Chen, Y Zhang, L Li… - Acs …, 2017 - ACS Publications
In this report, we propose to enhance the hole injection efficiency by adjusting the barrier
height of the p-type electron blocking layer (p-EBL) for∼ 273 nm deep ultraviolet light …
height of the p-type electron blocking layer (p-EBL) for∼ 273 nm deep ultraviolet light …
Enhancement of the optoelectronic characteristics of deep ultraviolet nanowire laser diodes by induction of bulk polarization charge with graded AlN composition in …
AlGaN based Nanowire laser diodes (NW-LDs) grown on sapphire substrates have strong
polarization induced electric field. Such electric field has the ability to degrade the …
polarization induced electric field. Such electric field has the ability to degrade the …
On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes
The drift velocity for holes is strongly influenced by the electric field in the p-type hole
injection layer for III-nitride based deep ultraviolet light-emitting diodes (DUV LEDs). In this …
injection layer for III-nitride based deep ultraviolet light-emitting diodes (DUV LEDs). In this …
Improving charge carrier transport properties in AlGaN deep ultraviolet light emitters using Al-content engineered superlattice electron blocking layer
In this study, we investigate a unique Al-content engineered superlattice electron blocking
layer (AESL-EBL) for improving the charge carrier transport properties of AlGaN quantum …
layer (AESL-EBL) for improving the charge carrier transport properties of AlGaN quantum …
Improving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL/hole supplier interface
W Tian, M Liu, S Li, C Liu - Optical Materials Express, 2023 - opg.optica.org
In AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the large valence band
offset between the Al-rich electron blocking layer (EBL) and p-AlGaN hole supplier weakens …
offset between the Al-rich electron blocking layer (EBL) and p-AlGaN hole supplier weakens …
Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes
KH Lee, HJ Park, SH Kim, M Asadirad, YT Moon… - Optics express, 2015 - opg.optica.org
We study light-extraction efficiency (LEE) of AlGaN-based deep-ultraviolet light-emitting
diodes (DUV-LEDs) using flip-chip (FC) devices with varied thickness in remaining sapphire …
diodes (DUV-LEDs) using flip-chip (FC) devices with varied thickness in remaining sapphire …
Calculating the effect of AlGaN dielectric layers in a polarization tunnel junction on the performance of AlGaN-based deep-ultraviolet light-emitting diodes
Y Wang, Z Zhang, L Guo, Y Chen, Y Li, Z Qi, J Ben… - Nanomaterials, 2021 - mdpi.com
In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as
the dielectric layers in p+-Al0. 55Ga0. 45N/AlGaN/n+-Al0. 55Ga0. 45N polarization tunnel …
the dielectric layers in p+-Al0. 55Ga0. 45N/AlGaN/n+-Al0. 55Ga0. 45N polarization tunnel …
On the p-AlGaN/n-AlGaN/p-AlGaN current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes
J Che, C Chu, K Tian, J Kou, H Shao, Y Zhang… - Nanoscale Research …, 2018 - Springer
In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-
AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been …
AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been …