Recent advances in low‐dimensional heterojunction‐based tunnel field effect transistors
Since the continuous scaling down of the transistor channel length, extraordinary
improvement is achieved in the switching speed. However, the rising leakage current …
improvement is achieved in the switching speed. However, the rising leakage current …
Extended-source double-gate tunnel FET with improved DC and analog/RF performance
In this article, we propose an extended-source double-gate tunnel field-effect transistor
(ESDG-TFET) to enhance the dc and analog/RF performance. The source of an ESDG-TFET …
(ESDG-TFET) to enhance the dc and analog/RF performance. The source of an ESDG-TFET …
Influence of molecular weight of polymer electret on the synaptic organic field‐effect transistor performance
Chargeable polymer electret‐based organic field‐effect transistor (OFET) memory devices
are attractive for intrinsically flexible artificial synapse. However, the effects of molecular …
are attractive for intrinsically flexible artificial synapse. However, the effects of molecular …
A review on emerging tunnel FET structures for high-speed and low-power circuit applications
Tunnel FET is found to be a prominent candidate to address the various issues like short
channel effects, thermionic limitation, which are dominant in MOSFET. It has grabbed the …
channel effects, thermionic limitation, which are dominant in MOSFET. It has grabbed the …
Charge-plasma-based inverted T-shaped source-metal dual-line tunneling FET with improved performance at 0.5 V operation
In this paper, a charge plasma-based inverted T-shaped source-metal dual line-tunneling
field-effect transistor (CP-ITSM-DLTFET) has been proposed to improve the ON current (I …
field-effect transistor (CP-ITSM-DLTFET) has been proposed to improve the ON current (I …
Design and investigation of a novel charge plasma-based core-shell ring-TFET: analog and linearity analysis
A novel device architecture charge plasmabased Ring-TFET (CP-RingTFET) has been
described in this work. The ring structure of the proposed device uses a coreshell …
described in this work. The ring structure of the proposed device uses a coreshell …
Vertical cladding layer-based doping-less tunneling field effect transistor: a novel low-power high-performance device
IC Cherik, S Mohammadi - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
This article introduces a novel vertical doping-less tunnel field-effect transistor (TFET), in
which instead of using metal to induce charge plasma in the source region, cladding layer is …
which instead of using metal to induce charge plasma in the source region, cladding layer is …
Analysis of a novel metal implant junctionless tunnel FET for better DC and analog/RF electrostatic parameters
Steep rise in the subthreshold slope, high current driving capability, and negligible
ambipolarity are the major prerequisite conditions of tunnel FETs (TFETs) to make it …
ambipolarity are the major prerequisite conditions of tunnel FETs (TFETs) to make it …
Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance
In this paper, two III-V material-based junctionless tunnel FET devices, D-1 and D-2, are
proposed. The proposed device D-1 has a low bandgap (GaSb-based) dual source and a …
proposed. The proposed device D-1 has a low bandgap (GaSb-based) dual source and a …
A novel dopingless fin-shaped SiGe channel TFET with improved performance
S Chen, S Wang, H Liu, T Han, H Xie… - Nanoscale Research …, 2020 - Springer
In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and
studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe …
studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe …