A-plane GaN (112¯ 0) epilayers have been grown on r-plane (11¯ 02) sapphire by MOCVD,
and investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and …

Using RF plasma-assisted molecular beam epitaxy, we succeeded in the growth of GaN (11
̄ 00) on γ-LiAlO2 (100). The crystal orientation and structural properties of 1.5 μm thick GaN …

A vicinal surface of silicon is found that exhibits an atomically accurate step pattern with a
period of 5.73 nm, corresponding to 17 atomic rows per 111 terrace. It can be viewed as …

In this paper we present a review on major advances achieved over the past ten years in the
field of fabrication of semiconductor quantum wires (QWRs) using epitaxial growth …

We investigate the growth of M‐plane GaN (1 ̄1 00) on γ‐LiAlO2 (100) by molecular beam
epitaxy. The crystal orientation and structural properties of buffer layers are examined by …

We study the growth of Fe by molecular beam epitaxy on GaAs (100),(311) A, and (331) A
substrates in dependence on the termination (reconstruction) of the GaAs surface and Fe …

We report the observation of Raman silent modes of B 1 low (276 cm− 1) and B 1 high (582
cm− 1) in vertically aligned ZnO nanorods due to the breakdown of translational symmetry …

Self-organized surface nanostructures were formed during laser molecular beam epitaxy of
nonpolar ZnO (10− 10)⁠. The growth mechanism of the nanostructures was related to a …

Nanostripe arrays with high density in the orders of 10− 5 cm− 1 were naturally formed on
ZnO (10-10) surfaces during laser molecular-beam-epitaxy (laser-MBE) growth. The …

Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by metalorganic
chemical vapor deposition (MOCVD). The as-grown films were studied by atomic force …