APPLY FORCE TO BOW FLEXBLE SUBSTRATE WAFER a wafer with a strained
semiconductor. In various embodi ments of the method, a predetermined contour is formed …

5,877,070 5,879,996 5,963,817 6,022,793 6,083,324 6,093,623 6,096,433 6,103,598
6,107,661 6,136,666 6,143,628 6,174,784 6,204,145 6,228,694 6,242,324 6,251,751 …

(57) ABSTRACT A process of making a strained silicon-on-insulator structure is disclosed. A
recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms …

Amethod for forming a semiconductor on insulator structure includes forming a
semiconductor layer on an insulating substrate, Where the substrate is a different material …

One aspect of this disclosure relates to a method for straining a transistor body region. In
various embodiments, oxygen ions are implanted to a predetermined depth in a localized …

Si samples (001) oriented have been implanted with 10 17 74 Ge/cm 2 (17.7 at.% maximum
Ge concentration) and then pulse annealed with either ruby or excimer (XeCl) lasers in the …

US7271445B2 - Ultra-thin semiconductors bonded on glass substrates - Google Patents
US7271445B2 - Ultra-thin semiconductors bonded on glass substrates - Google Patents …

One aspect of this disclosure relates to a method for straining a transistor body region. In
various embodiments, oxygen ions are implanted to a predetermined depth in a localized …

One aspect of the present invention relates to a method for forming a strained semiconductor
structure. In various embodiments, at least two strong bonding regions are defined for a …

Crystallization of thin film materials by exploiting laser-induced crystallization has been
advancing for the past four decades. This unique thin film technique has pedominantly been …