Current-induced torques in magnetic materials
The magnetization of a magnetic material can be reversed by using electric currents that
transport spin angular momentum. In the reciprocal process a changing magnetization …
transport spin angular momentum. In the reciprocal process a changing magnetization …
Spintronics
SD Bader, SSP Parkin - Annu. Rev. Condens. Matter Phys., 2010 - annualreviews.org
Spintronics encompasses the ever-evolving field of magnetic electronics. It is an applied
discipline that is so forward-looking that much of the research that supports it is at the center …
discipline that is so forward-looking that much of the research that supports it is at the center …
Current-driven magnetic domain-wall logic
Spin-based logic architectures provide nonvolatile data retention, near-zero leakage, and
scalability, extending the technology roadmap beyond complementary metal–oxide …
scalability, extending the technology roadmap beyond complementary metal–oxide …
Overview of beyond-CMOS devices and a uniform methodology for their benchmarking
DE Nikonov, IA Young - Proceedings of the IEEE, 2013 - ieeexplore.ieee.org
Multiple logic devices are presently under study within the Nanoelectronic Research
Initiative (NRI) to carry the development of integrated circuits beyond the complementary …
Initiative (NRI) to carry the development of integrated circuits beyond the complementary …
Giant Spin Pumping and Inverse Spin Hall Effect in the Presence of Surface and Bulk Spin−Orbit Coupling of Topological Insulator Bi2Se3
Three-dimensional (3D) topological insulators are known for their strong spin–orbit coupling
(SOC) and the existence of spin-textured surface states that might be potentially exploited for …
(SOC) and the existence of spin-textured surface states that might be potentially exploited for …
Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕ MgO∕ CoFeB pseudo-spin-valves annealed at high temperature
The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300 K in Ta∕ Co
20 Fe 60 B 20∕ Mg O∕ Co 20 Fe 60 B 20∕ Ta pseudo-spin-valve magnetic tunnel junction …
20 Fe 60 B 20∕ Mg O∕ Co 20 Fe 60 B 20∕ Ta pseudo-spin-valve magnetic tunnel junction …
[HTML][HTML] Spintronics: A contemporary review of emerging electronics devices
VK Joshi - Engineering science and technology, an international …, 2016 - Elsevier
Spintronics is a new field of research exploiting the influence of electron spin on the
electrical conduction (or current is spin dependent). The major problem is the realization and …
electrical conduction (or current is spin dependent). The major problem is the realization and …
[HTML][HTML] Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product
We report electric-field-induced switching with write energies down to 6 fJ/bit for switching
times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high …
times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high …
Nanoscale resistive switching memory devices: a review
S Slesazeck, T Mikolajick - Nanotechnology, 2019 - iopscience.iop.org
In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …
described and classified according to their I–V behaviour and the underlying physical …
Spin-transfer torque RAM technology: Review and prospect
T Kawahara, K Ito, R Takemura, H Ohno - Microelectronics Reliability, 2012 - Elsevier
Non-volatile RAM (NV-RAM) enables instant-on/off computing, which drastically reduces
power consumption. One of the most promising candidates for NV-RAM technology is the …
power consumption. One of the most promising candidates for NV-RAM technology is the …