Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices
HD Kim, HM An, EB Lee, TG Kim - IEEE transactions on …, 2011 - ieeexplore.ieee.org
The authors report upon the ultrafast bipolar switching characteristics observed in aluminum
nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset …
nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset …
[HTML][HTML] Investigation of resistive switching and transport mechanisms of Al2O3/TiO2− x memristors under cryogenic conditions (1.5 K)
Y Beilliard, F Paquette, F Brousseau, S Ecoffey… - AIP Advances, 2020 - pubs.aip.org
Resistive switching and transport mechanisms of Al 2 O 3/TiO 2− x memristor crosspoint
devices have been investigated at cryogenic temperatures down to 1.5 K, for the future …
devices have been investigated at cryogenic temperatures down to 1.5 K, for the future …
Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel–lithium oxide on indium tin oxide substrate
CC Wu, CF Yang - ACS Applied Materials & Interfaces, 2013 - ACS Publications
P-type lithium-doped nickel oxide (p-LNiO) thin films were deposited on an n-type indium tin
oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a …
oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a …
Optical properties of selenium–tellurium nanostructured thin film grown by thermal evaporation
K Tripathi, AA Bahishti, MAM Khan, M Husain… - Physica B: Condensed …, 2009 - Elsevier
Se–Te nanostructured thin films were deposited on glass substrates in the presence of
oxygen and argon by thermal evaporation. The properties of Se–Te thin films strongly …
oxygen and argon by thermal evaporation. The properties of Se–Te thin films strongly …
Effect of laser irradiation on thermal and optical properties of selenium–tellurium alloy
AA Bahishti, MAM Khan, BS Patel, FS Al-Hazmi… - Journal of Non …, 2009 - Elsevier
The crystallization parameters such as glass transition temperature (Tg), onset crystallization
temperature (Tc), peak crystallization temperature (Tp) and enthalpy released (ΔHC) of the …
temperature (Tc), peak crystallization temperature (Tp) and enthalpy released (ΔHC) of the …
Temperature dependence of the band gap, refractive index and single-oscillator parameters of amorphous indium selenide thin films
AF Qasrawi - Optical Materials, 2007 - Elsevier
InSe thin films are obtained by evaporating InSe crystal onto ultrasonically cleaned glass
substrates under pressure of∼ 10− 5Torr. The structural and compositional analysis …
substrates under pressure of∼ 10− 5Torr. The structural and compositional analysis …
Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films
C Viswanathan, V Senthilkumar… - … of Experimental and …, 2005 - Wiley Online Library
Thin films of InSe were obtained by thermal evaporation techniques on glass substrates
maintained at various temperatures (Tsb= 30°, 400° C). X‐ray diffraction analysis showed …
maintained at various temperatures (Tsb= 30°, 400° C). X‐ray diffraction analysis showed …
Role of Sn in the density of defect states in a-Se_ {0.75} Te_ {0.25} and a-Se_ {0.85} Te_ {0.15} thin films
In this paper we report the effect of Sn incorporation in the density of defect states of two
binary Se-Te glassy systems, comparing the properties of a-Se_ {0.75} Te_ {0.25}, a-Se …
binary Se-Te glassy systems, comparing the properties of a-Se_ {0.75} Te_ {0.25}, a-Se …
Temperature dependence of the direct allowed transitions band gap and optical constants of polycrystalline α-In2Se3 thin films
AF Qasrawi - Thin Solid Films, 2006 - Elsevier
Polycrystalline α-In2Se3 thin films were obtained by the thermal evaporation of α-In2Se3
crystals onto glass substrates kept at temperature of 200° C. The temperature dependence …
crystals onto glass substrates kept at temperature of 200° C. The temperature dependence …
Laser irradiation effect on the optical band gap of Se-Te-Al thin films
Laser irradiation effect on the optical band gap of Se-Te-Al thin films has been studied.
Optical data Analysis of thin films indicates indirect allowed transition in the Se-Te-Al system …
Optical data Analysis of thin films indicates indirect allowed transition in the Se-Te-Al system …