3D FinFET for next generation nano devices
S Vidya, SV Kamat, AR Khan… - … Conference on Current …, 2018 - ieeexplore.ieee.org
Miniaturization has been a constant challenge to meet the demands of high performance,
high density, low power and low voltage complex devices. Miniaturization is the main driving …
high density, low power and low voltage complex devices. Miniaturization is the main driving …
Design of Hetero-Dielectric Single-Metal Gate-All-Around MOSFET with Schottky Contact Source/Drain
R Devi, G Kaur - International Conference on Nanotechnology …, 2022 - Springer
One of the most promising device configurations for extending CMOS device scaling is the
gate-all-around MOSFET since it provides excellent electrostatic control of the channel. In …
gate-all-around MOSFET since it provides excellent electrostatic control of the channel. In …
Design and Performance Evaluation of 8T SRAM Cell Using FinFET and CMOS at 16nm Technology
P Mandadi - 2021 - search.proquest.com
Cache memories on the processor are the crucial blocks in VLSI system design. Careful
inspection of the performance, power, and area of memories is necessary before fabricating …
inspection of the performance, power, and area of memories is necessary before fabricating …