Abstract 2D layered chalcogenide semiconductors have been proposed as a promising
class of materials for low‐dimensional electronic, optoelectronic, and spintronic devices …

Abstract Two-dimensional (2D) materials including graphene, hexagonal boron nitride, and
transition metal dichalcogenides have revolutionized electronic, optoelectronic and …

Abstract Two-dimensional (2D) materials comprising of graphene, hexagonal boron nitride
(hBN) and transition metal dichalcogenides (TMDs) have revealed fascinating properties in …

A spin-valve heterojunction plays a vital role in many technologies such as non-volatile
magnetic random-access memories (MRAMs) and high-density magnetic recording. In …

We report on spin transport in state-of-the-art epitaxial monolayer graphene based 2D-
magnetic tunnel junctions (2D-MTJs). In our measurements, supported by ab-initio …

Nitride-based van der Waals magnetic heterostructures can simultaneously utilize both
charge and spin degrees of electrons, which are important materials for low-dimensional …

Graphene‐based vertical spin valves (SVs) are expected to offer a large magnetoresistance
effect without impairing the electrical conductivity, which can pave the way for the next …

Spintronic devices serve as important components of the next-generation large scale
integrated circuits, but until today, spintronic devices of different kinds can only be realized …

Graphene, the first isolated two-dimensional atomic crystal, is about to pass its 20th year.
The last decade has been a critical period for graphene to gradually move from the …

Graphene spin valves can be optimized for various spintronic applications by tuning the
associated experimental parameters. In this work, we report the angle dependent …