Due to recent breakthroughs, silicon photonics is now the most active discipline within the
field of integrated optics and, at the same time, a present reality with commercial products …

Since the first edition of this book, a lot of interesting integrated optoelectronic devices were
investigated and introduced in numerous publications. Therefore, Springer and me decided …

An overview of recent results on high-speed germanium-on-silicon-on-insulator (Ge-on-SOI)
photodetectors and their prospects for integrated optical interconnect applications are …

Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert
light into electricity. Over the past decades, high-performance photodetectors (PDs) have …

The Springer Series in Advanced Microelectronics provides systematic information on all the
topics relevant for the design, processing, and manufacturing of microelectronic devices …

We demonstrate normal incidence pin photodiodes on selective-area-grown Ge using
multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An …

The authors report the performance of selective epitaxial Ge (400 nm) on Si-on-insulator pin
mesa-type normal incidence photodiodes using∼ 14 nm low-temperature Si 0.8 Ge 0.2 …

In this study, different Schottky photodetectors with a plasmonic assist which receives Near-
infrared (NIR) light at room temperature were demonstrated. We achieved remarkable …

We demonstrate a high-speed polarization-insensitive photoconductor based on
intersecting InP nanowires synthesized between a pair of hydrogenated silicon electrodes …

We report the fabrication and characterization of all‐silicon photodetectors at 1550 nm
based on the internal photoemission effect. We investigated two types of structures: bulk and …