US8587093B2 - Multilayer device with organic and inorganic dielectric material - Google
Patents US8587093B2 - Multilayer device with organic and inorganic dielectric material …

(56) References Cited A method for growing films for use in integrated circuits using atomic
layer deposition and a subsequent converting US PATENT DOCUMENTS step is described …

3,357,961 A 12/1967 Makowski et al. 4,058.430 A 11/1977 Suntola et al. 4.413, 022 A 11,
1983 Suntola et al. 4,993,358 A 2f1991 Mahawili 5,055.319 A 10, 1991 Bunshah et al …

The use of atomic layer deposition (ALD) to form a nano laminate dielectric of zirconium
oxide (ZrO), hafnium oxide (HfO2) and tin oxide (SnO) acting as a single dielectric layer with …

US PATENT DOCUMENTS 6,642,573 B1 11/2003 Halliyal et al. 6,645,882 B1 11/2003
Halliyal et al. 6,020,243 A 2/2000 Wallace et al. 6,646,307 B1 11/2003 Yu et al. 6,025,627 A …

Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more
monolayers and a lanthanide oxide layer and a method of fabricating Such a dielectric layer …

4,058.430 4,096,227 4,137,200 4,215,156 4,293,679 4,302,620 4,308.421 4.333, 808
4,358,397 4,368,350 4,372,032 4,394,673 4,399,424 4,403,083 4.413, 022 4,482,516 …

430. In an embodiment, the Zirconium-containing precursor is ZTB. In other embodiments, a
Zirconium-containing pre cursor includes but is not limited to ZrCl and Zria. The ZTB …

Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a
substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may …

The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of zirconium
oxide (ZrO 2), hafnium oxide (HfO 2) and tin oxide (SnO 2) acting as a single dielectric layer …