A catadioptric projection objective for imaging a pattern provided in an object plane of the
projection objective onto an image plane of the projection objective comprises: a first …

An all-refelctive optical system for a projection photolithography camera has a source of
EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a …

An optical projection reduction System used in photolithog raphy for the manufacture of
Semiconductor devices having a first mirror pair, a Second field mirror pair, and a third mirror …

4,232,969 A 11/1980 Wilczynski...... 356/401 group more image forward than the first optical
group 4,595.295 A 6/1986 Wilczynski...... 356/401 having a number of lenses. The Second …

(57) ABSTRACT A Z-pinch plasma X-ray Source includes a chamber having an insulating
wall and defining a pinch region, a pinch anode and a pinch cathode positioned at opposite …

57 ABSTRACT A projection lithographic system that operates within the deep ultraviolet to
vacuum ultraviolet region of the spectrum and uses an all-reflective optical arrangement to …

An optical system is described that is compatible with extreme ultraviolet radiation and
comprises five reflective elements for projecting a mask image onto a substrate. The five …

This invention is related to an optical System for use with Short wavelength radiation in
photolithography equipment. 2. Background of the Invention Photolithography is a well …

(57) ABSTRACT A projection optical System having a large numerical aper ture in a Soft X-
ray wavelength range of 200 nm or less, specifically 100 nm or less and a resolution …

A photolithography system includes a light source and illumination optics which receive light
from the light source and project illumination light onto a mask. Light transmitted through the …