Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications

P Lai, D Gonzalez, S Madhusoodhanan, A Sabbar… - Scientific Reports, 2022 - nature.com
This paper reports high-temperature optocouplers for signal galvanic isolation. Low
temperature co-fired ceramic (LTCC) technology was used in the design and fabrication of …

High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules

S Madhusoodhanan, A Sabbar, H Tran, P Lai… - Scientific Reports, 2022 - nature.com
A low-temperature co-fired ceramic (LTCC)-based optocoupler design is demonstrated as a
possible solution for optical isolation in high-density integrated power modules. The design …

Design and optimization of high temperature optocouplers as galvanic isolation

A Sabbar, S Madhusoodhanan, H Tran, B Dong… - Scientific reports, 2022 - nature.com
The commercial InGaN-based (blue and green) and AlGaInP-based (red) multiple quantum
well (MQW) lighting emitting diodes (LEDs) were studied in a wide range of temperatures up …

High‐Performance and Temperature‐Stable InGaN Single‐Quantum‐Well Red Light‐Emitting Diodes via Selective Hydrogen Passivation

C Altinkaya, P Kirilenko, D Iida… - physica status solidi …, 2024 - Wiley Online Library
Herein, a selective passivation of p‐GaN via hydrogen plasma treatment for InGaN single‐
quantum‐well (SQW) red light‐emitting diodes (LEDs) is reported. Insulating regions are …

Electrothermal Modeling of Monolithically Integrated GaN-Based LED Devices

MS Baghini, R Parvizi, F Walton… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Monolithically integrated GaN devices have gained traction due to their lowered cost and
suitability to produce large-scale optoelectronic and digital communication systems. To …

[引用][C] 高效率钙钛矿量子点发光二极管研究进展

皮慧慧, 李国辉, 周博林, 崔艳霞 - 发光学报, 2021

Development of Optical Galvanic Isolated Gate Driver Board for High-Temperature SiC Power Module Integration

DEG Castillo - 2021 - search.proquest.com
Wide-bandgap (WBG) semiconductor devices are the key to enable the evolution of power
electronic technologies. Silicon carbide (SiC) devices exhibit much lower on-state voltage …

[图书][B] Growth and Characterization of Semiconductor Materials and Devices for Extreme Environments Applications

A Sabbar - 2020 - search.proquest.com
Growth and Characterization of Semiconductor Materials and Devices for Extreme Environments
Applications A dissertation submitte Page 1 Growth and Characterization of Semiconductor …