New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …

Using hybrid functional calculations, we investigate the formation of DX centers in GaN and
AlN. We find that O, Si, and Ge are shallow donors in GaN, but form stable DX centers in AlN …

Electron paramagnetic resonance studies of Si-doped Al x Ga 1− x N (0.79≤ x≤ 1.0) reveal
two Si negative-U (or DX) centers, which can be separately observed for x≥ 0.84. We found …

ZnO nanowires typically show persistent photoconductivity (PPC), which depends in their
temporal behaviour on the ambient. We investigate ZnO nanowires in oxygen and argon …

Highly doped n-Al_0. 6Ga_0. 4N can be used to form tunnel junctions (TJs) on deep
ultraviolet (UVC) LEDs and markedly increase the light extraction efficiency (LEE) compared …

The effective electron mass parameter in Si-doped Al 0.72 Ga 0.28 N is determined to be
m∗=(0.336±0.020) m 0 from mid-infrared optical Hall effect measurements. No significant …

Contrary to the arsenides where donors undergo stable DX transition, we find that Ge in
AlGaN does not suffer from the DX transition; instead, it undergoes a shallow donor (30 …

Unintentionally doped (UID) AlGaN epilayers graded over Al compositions of 80%–90% and
80%–100% were grown by metal organic vapor phase epitaxy and were electrically …

Abstract The high-Al-content AlxGa1-xN, x> 0.70, is the principal wide-band-gap alloy
system to enable the development of light-emitting diodes operating at the short …

The combined temporally, spatially and spectrally‐resolved optical techniques, namely the
photoluminescence, light induced transient grating, and differential reflectivity were used for …