Many materials systems are currently under consideration as potential replacements for SiO
2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor …

High-κ Dielectric Materials for Microelectronics Page 1 Critical Reviews in Solid State and
Materials Sciences, 28:231–285, 2003 Copyright C Taylor and Francis Inc. ISSN: 1040-8436 …

The rapidly increasing global demand for energy combined with the environmental impact of
fossil fuels has spurred the search for alternative sources of clean energy. One promising …

Most semiconductor materials such as Si, Ge, and GaAs are subject to oxidation when
exposed to oxidants. This results in difficulties in the heterointegration of epitaxial oxides on …

We have measured the band offsets and materials properties of epitaxial SrTiO 3/Si (001)
heterojunctions for both n and p substrates, with and without an interfacial SiO 2 layer. The …

Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO 3 (BTO) on Si (001) using a
thin (1.6 nm) buffer layer of SrTiO 3 (STO) grown by molecular beam epitaxy is reported. The …

The formation of interfacial layers between silicon and the overgrown epitaxial SrTiO 3 as a
function of the growth temperature has been studied in detail using x-ray photoelectron …

In order to develop and verify a dielectric breakdown model for bulk insulators thicker than
100 μm, the knowledge of the dominating conduction mechanism at high electric fields, or …

We have used medium energy ion scattering, temperature programmed desorption, and
atomic force microscopy to study the interface composition and thermal stability of epitaxial …

Epitaxial strontium titanate (STO) films have been grown by atomic layer deposition (ALD)
on Si (001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE) …