HfOx/AlOy Superlattice‐Like Memristive Synapse
C Wang, GQ Mao, M Huang, E Huang… - Advanced …, 2022 - Wiley Online Library
The adjustable conductance of a two‐terminal memristor in a crossbar array can facilitate
vector‐matrix multiplication in one step, making the memristor a promising synapse for …
vector‐matrix multiplication in one step, making the memristor a promising synapse for …
Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor
Through oxygen profile engineering, we fabricated W/AlO x/Al 2 O 3/Pt bilayer memristors
with a 250-nm feature size. The AlOX fabricated by sputtering serves as an oxygen vacancy …
with a 250-nm feature size. The AlOX fabricated by sputtering serves as an oxygen vacancy …
Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices
A reliable oxide-based tungsten-doped indium-tin-oxide/tantalum oxide/titanium nitride (W-
ITO/TaOx/TiN) memristor with controllable memory states and synaptic properties for …
ITO/TaOx/TiN) memristor with controllable memory states and synaptic properties for …
Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory
G Zhou, X Yang, L Xiao, B Sun, A Zhou - Applied Physics Letters, 2019 - pubs.aip.org
A redox reaction submerged by a high current magnitude is impressively observed in a Fe 2
O 3 solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy …
O 3 solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy …
Uniform and robust TiN/HfO2/Pt memristor through interfacial Al-doping engineering
Doping and interface engineering are important schemes to address the variation problem
which hinders the application of memristors. In this study, combination of doping and …
which hinders the application of memristors. In this study, combination of doping and …
Energy efficient short-term memory characteristics in Ag/SnOx/TiN RRAM for neuromorphic system
O Kwon, J Shin, D Chung, S Kim - Ceramics International, 2022 - Elsevier
In this work, we demonstrate the short-term memory effects of an Ag/SnO x/TiN memristor
device using the spontaneous reset process for a neuromorphic system. The thickness and …
device using the spontaneous reset process for a neuromorphic system. The thickness and …
Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory
The resistive switching behavior in resistive random access memories (RRAMs) using
atomic-layer-deposited Ga2O3/ZnO composite film as the dielectric was investigated. By …
atomic-layer-deposited Ga2O3/ZnO composite film as the dielectric was investigated. By …
Linearity improvement of HfOx-based memristor with multilayer structure
Y Jiang, K Zhang, K Hu, Y Zhang, A Liang… - Materials Science in …, 2021 - Elsevier
The limitation of traditional Von Neumann architecture could be resolved by machine
learning training in neuromorphic computing. However, the nonlinearity characteristic during …
learning training in neuromorphic computing. However, the nonlinearity characteristic during …
Naive Bayes classifier based on memristor nonlinear conductance
In this work, a naive Bayes classifier (NBC) based on memristor nonlinear conductance
modulation is proposed, which not only can effectively avoid the influence of memristor …
modulation is proposed, which not only can effectively avoid the influence of memristor …
Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb 2 Br 5 perovskite
Despite the recent advancements in memory devices, the quest for building materials with
low power consumption is still on, with the ultimate focus on the durability of the system and …
low power consumption is still on, with the ultimate focus on the durability of the system and …