A comprehensive review of ion beam application in modern materials research is provided,
including the basics of ion beam physics and technology. The physics of ion-solid …

On annealing a boron implanted Si sample at∼ 800° C, boron in the tail of the implanted
profile diffuses very fast, faster than the normal thermal diffusion by a factor 100 or more …

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during
annealing which arises from the excess interstitials generated by the implant. In order to …

Basically all properties of semiconductor devices are influenced by the distribution of point
defects in their active areas. This book contains the first comprehensive review of the …

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial
annealing, due to Si interstitials being emitted from the region of the implant damage. The …

Semiconductor industry has increasingly resorted to strain as a means of realizing the
required node-to-node transistor performance improvements. Straining silicon …

Ion implantation offers one of the best examples of a topic that starting from the basic
research level has reached the high technology level within the framework of …

We discuss molecular-dynamics simulations of ion damage in silicon, with emphasis on the
effects of ion mass and energy. We employ the Stillinger-Weber potential for silicon, suitably …

The effect of substitutional C on interstitial‐enhanced B diffusion in Si has been investigated.
Substitutional C was incorporated into B doped Si superlattices using molecular‐beam …

USRE39484E1 - Process for the production of thin semiconductor material films - Google
Patents USRE39484E1 - Process for the production of thin semiconductor material films …