Printed subthreshold organic transistors operating at high gain and ultralow power
Overcoming the trade-offs among power consumption, fabrication cost, and signal
amplification has been a long-standing issue for wearable electronics. We report a high …
amplification has been a long-standing issue for wearable electronics. We report a high …
Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain
The quest for low power becomes highly compelling in newly emerging application areas
related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier …
related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier …
Meniscus-controlled printing of single-crystal interfaces showing extremely sharp switching transistor operation
G Kitahara, S Inoue, T Higashino, M Ikawa… - Science …, 2020 - science.org
Meniscus, a curvature of droplet surface around solids, takes critical roles in solution-based
thin-film processing. Extension of meniscus shape, and eventual uniform film growth, is …
thin-film processing. Extension of meniscus shape, and eventual uniform film growth, is …
Oxygen vacancies effects in a‐IGZO: Formation mechanisms, hysteresis, and negative bias stress effects
A de Jamblinne de Meux, A Bhoolokam… - … status solidi (a), 2017 - Wiley Online Library
The amorphous oxide semiconductor Indium‐Gallium‐Zinc‐Oxide (a‐IGZO) has gained a
large technological relevance as a semiconductor for thin‐film transistors in active‐matrix …
large technological relevance as a semiconductor for thin‐film transistors in active‐matrix …
Flexible ultralow-power sensor interfaces for e-skin
Thin-film electronics has hugely benefitted from low-cost processes, large-area
processability, and multifunctionality. This has not only stimulated innovation in display and …
processability, and multifunctionality. This has not only stimulated innovation in display and …
Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region
Y Zhou, X Wang, A Dodabalapur - Advanced Electronic …, 2023 - Wiley Online Library
The measurement of mobility and threshold voltage in thin‐film transistors (TFTs) in which
the mobility is a function of gate voltage or carrier density is usually done inaccurately …
the mobility is a function of gate voltage or carrier density is usually done inaccurately …
Rational design of hydrogen and nitrogen co-doped ZnO for high performance thin-film transistors
A Abliz, X Xue, X Liu, G Li, L Tang - Applied Physics Letters, 2021 - pubs.aip.org
This work investigates the effect of nitrogen and hydrogen (N/H) co-doping on the
performance of ZnO thin-film transistors (TFTs). Optimum N/H co-doped ZnO TFTs showed …
performance of ZnO thin-film transistors (TFTs). Optimum N/H co-doped ZnO TFTs showed …
Approaching Trap‐Minimized Polymer Thin‐Film Transistors
G Kitahara, M Ikawa, S Matsuoka, S Arai… - Advanced Functional …, 2021 - Wiley Online Library
Semiconducting π‐conjugated polymers are the most promising candidates for flexible
electronics owing to their facile processability and mechanical robustness; however …
electronics owing to their facile processability and mechanical robustness; however …
[HTML][HTML] Conduction threshold in accumulation-mode InGaZnO thin film transistors
The onset of inversion in the metal-oxide-semiconductor field-effect transistor (MOSFET)
takes place when the surface potential is approximately twice the bulk potential. In contrast …
takes place when the surface potential is approximately twice the bulk potential. In contrast …