Printed subthreshold organic transistors operating at high gain and ultralow power

C Jiang, HW Choi, X Cheng, H Ma, D Hasko, A Nathan - Science, 2019 - science.org
Overcoming the trade-offs among power consumption, fabrication cost, and signal
amplification has been a long-standing issue for wearable electronics. We report a high …

Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

S Lee, A Nathan - Science, 2016 - science.org
The quest for low power becomes highly compelling in newly emerging application areas
related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier …

Meniscus-controlled printing of single-crystal interfaces showing extremely sharp switching transistor operation

G Kitahara, S Inoue, T Higashino, M Ikawa… - Science …, 2020 - science.org
Meniscus, a curvature of droplet surface around solids, takes critical roles in solution-based
thin-film processing. Extension of meniscus shape, and eventual uniform film growth, is …

TFT compact modeling

X Cheng, S Lee, G Yao… - Journal of Display …, 2016 - ieeexplore.ieee.org
This paper reviews the major developments in thin-film transistor (TFT) modeling for the
computer aided design (CAD) and simulation of circuits and systems. Following the progress …

Oxygen vacancies effects in a‐IGZO: Formation mechanisms, hysteresis, and negative bias stress effects

A de Jamblinne de Meux, A Bhoolokam… - … status solidi (a), 2017 - Wiley Online Library
The amorphous oxide semiconductor Indium‐Gallium‐Zinc‐Oxide (a‐IGZO) has gained a
large technological relevance as a semiconductor for thin‐film transistors in active‐matrix …

Flexible ultralow-power sensor interfaces for e-skin

C Jiang, X Cheng, A Nathan - Proceedings of the IEEE, 2019 - ieeexplore.ieee.org
Thin-film electronics has hugely benefitted from low-cost processes, large-area
processability, and multifunctionality. This has not only stimulated innovation in display and …

Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region

Y Zhou, X Wang, A Dodabalapur - Advanced Electronic …, 2023 - Wiley Online Library
The measurement of mobility and threshold voltage in thin‐film transistors (TFTs) in which
the mobility is a function of gate voltage or carrier density is usually done inaccurately …

Rational design of hydrogen and nitrogen co-doped ZnO for high performance thin-film transistors

A Abliz, X Xue, X Liu, G Li, L Tang - Applied Physics Letters, 2021 - pubs.aip.org
This work investigates the effect of nitrogen and hydrogen (N/H) co-doping on the
performance of ZnO thin-film transistors (TFTs). Optimum N/H co-doped ZnO TFTs showed …

Approaching Trap‐Minimized Polymer Thin‐Film Transistors

G Kitahara, M Ikawa, S Matsuoka, S Arai… - Advanced Functional …, 2021 - Wiley Online Library
Semiconducting π‐conjugated polymers are the most promising candidates for flexible
electronics owing to their facile processability and mechanical robustness; however …

[HTML][HTML] Conduction threshold in accumulation-mode InGaZnO thin film transistors

S Lee, A Nathan - Scientific reports, 2016 - nature.com
The onset of inversion in the metal-oxide-semiconductor field-effect transistor (MOSFET)
takes place when the surface potential is approximately twice the bulk potential. In contrast …