Design for reliability with the advanced integrated circuit (IC) technology: challenges and opportunities
Z Ji, H Chen, X Li - Science China. Information Sciences, 2019 - search.proquest.com
Reliability assurance is of great importance for any commercial products, and the integrated
circuit (IC) is no exception. Unlike the yield issues that are time-independent and can be …
circuit (IC) is no exception. Unlike the yield issues that are time-independent and can be …
[HTML][HTML] Bias temperature instability of mosfets: Physical processes, models, and prediction
CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a
key issue. To optimize chip design, trade-offs between reliability, speed, power …
key issue. To optimize chip design, trade-offs between reliability, speed, power …
Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation
To predict the negative bias temperature instability (NBTI) toward the end of pMOSFETs' ten
years lifetime, power-law-based extrapolation is the industrial standard method. The …
years lifetime, power-law-based extrapolation is the industrial standard method. The …
NBTI-generated defects in nanoscaled devices: Fast characterization methodology and modeling
Negative bias temperature instability (NBTI)-generated defects (GDs) have been widely
observed and known to play an important role in device's lifetime. However, its …
observed and known to play an important role in device's lifetime. However, its …
Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs
Silicon bandgap limits the reduction of operation voltage when downscaling device sizes.
This increases the electrical field within-a-device and hot carrier aging (HCA) is becoming …
This increases the electrical field within-a-device and hot carrier aging (HCA) is becoming …
An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel
Continuing CMOS performance scaling requires developing MOSFETs of high-mobility
semiconductors and InGaAs is a strong candidate for n-channel. InGaAs MOSFETs …
semiconductors and InGaAs is a strong candidate for n-channel. InGaAs MOSFETs …
Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
In this letter, we present an experimental study on the frequency (f) dependence of trap
generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin …
generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin …
Ge-friendly gate stacks: Initial property and long-term reliability
X Tang, R Zhu, Y Liu, Z Han - Micro and Nanostructures, 2024 - Elsevier
This work presents specific exploration on the novel gate stack strategies for the intriguing
Ge p-MOSFET, where high pressure oxidation (HPO) process is utilized for sufficient …
Ge p-MOSFET, where high pressure oxidation (HPO) process is utilized for sufficient …
A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO2/Ge and SiON/Si pMOSFETs
The high mobility germanium (Ge) channel is considered as a strong candidate for replacing
Si in pMOSFETs in the near future. It has been reported that the conventional power-law …
Si in pMOSFETs in the near future. It has been reported that the conventional power-law …
Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique
Abstract Negative Bias Temperature Instability (NBTI) on p-type Metal Oxide Semiconductor
Field Effect Transistors (pMOSFET) has been experienced with developed fast …
Field Effect Transistors (pMOSFET) has been experienced with developed fast …