Design for reliability with the advanced integrated circuit (IC) technology: challenges and opportunities

Z Ji, H Chen, X Li - Science China. Information Sciences, 2019 - search.proquest.com
Reliability assurance is of great importance for any commercial products, and the integrated
circuit (IC) is no exception. Unlike the yield issues that are time-independent and can be …

[HTML][HTML] Bias temperature instability of mosfets: Physical processes, models, and prediction

JF Zhang, R Gao, M Duan, Z Ji, W Zhang, J Marsland - Electronics, 2022 - mdpi.com
CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a
key issue. To optimize chip design, trade-offs between reliability, speed, power …

Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation

R Gao, AB Manut, Z Ji, J Ma, M Duan… - … on Electron Devices, 2017 - ieeexplore.ieee.org
To predict the negative bias temperature instability (NBTI) toward the end of pMOSFETs' ten
years lifetime, power-law-based extrapolation is the industrial standard method. The …

NBTI-generated defects in nanoscaled devices: Fast characterization methodology and modeling

R Gao, Z Ji, AB Manut, JF Zhang… - … on Electron Devices, 2017 - ieeexplore.ieee.org
Negative bias temperature instability (NBTI)-generated defects (GDs) have been widely
observed and known to play an important role in device's lifetime. However, its …

Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs

M Duan, JF Zhang, Z Ji, WD Zhang… - … on Electron Devices, 2017 - ieeexplore.ieee.org
Silicon bandgap limits the reduction of operation voltage when downscaling device sizes.
This increases the electrical field within-a-device and hot carrier aging (HCA) is becoming …

An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel

Z Ji, X Zhang, J Franco, R Gao, M Duan… - … on Electron Devices, 2015 - ieeexplore.ieee.org
Continuing CMOS performance scaling requires developing MOSFETs of high-mobility
semiconductors and InGaAs is a strong candidate for n-channel. InGaAs MOSFETs …

Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs

L Zhou, Q Zhang, H Yang, Z Ji, Z Zhang… - IEEE Electron …, 2020 - ieeexplore.ieee.org
In this letter, we present an experimental study on the frequency (f) dependence of trap
generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin …

Ge-friendly gate stacks: Initial property and long-term reliability

X Tang, R Zhu, Y Liu, Z Han - Micro and Nanostructures, 2024 - Elsevier
This work presents specific exploration on the novel gate stack strategies for the intriguing
Ge p-MOSFET, where high pressure oxidation (HPO) process is utilized for sufficient …

A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO2/Ge and SiON/Si pMOSFETs

J Ma, WD Zhang, JF Zhang, B Benbakhti… - … on Electron Devices, 2016 - ieeexplore.ieee.org
The high mobility germanium (Ge) channel is considered as a strong candidate for replacing
Si in pMOSFETs in the near future. It has been reported that the conventional power-law …

Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique

A Benabdelmoumene, B Djezzar, D Messaoud… - Russian …, 2023 - Springer
Abstract Negative Bias Temperature Instability (NBTI) on p-type Metal Oxide Semiconductor
Field Effect Transistors (pMOSFET) has been experienced with developed fast …