The emergence of silicon photonics over the past two decades has established silicon as a
preferred substrate platform for photonic integration. While most silicon-based photonic …

The availability of silicon photonic integrated circuits (ICs) in the 2–4 μm wavelength range
enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we …

Increasing demand for every faster information throughput is driving the emergence of
integrated photonic technology. The traditional silicon platform used for integrated …

Semiconductor membranes emerged as a versatile class of nanomaterials to control lattice
strain and engineer complex heterostructures enabling a variety of innovative applications …

We report high-speed photo detection at two-micron-wavelength achieved by a GeSn/Ge
multiple-quantum-well (MQW) pin photodiode, exhibiting a 3-dB bandwidth (f3-dB) above 10 …

The mid-infrared spectral band (2–20 μm) is of significant technological importance for
thermal imaging, spectroscopic sensing, and free-space communications. Lack of optical …

Heterogeneously integrating III-V materials on silicon photonic integrated circuits has
emerged as a promising approach to make advanced laser sources for optical …

Abstract Mid‐infrared (MIR) waveguide‐integrated photodetector is essential for various
applications in the fields of sensing and optical communications. However, it is challenging …

In this paper we review our recent results on group IV mid-infrared photonic devices. In
particular, passive structures suitable for long wavelength operation, such as suspended Si …

We experimentally demonstrate a low-loss Ge-on-insulator (Ge-OI) passive waveguide with
low absorptive yttrium oxide (Y 2 O 3) as an insulator for a photonic platform using a wafer …