Influence of substrate temperature on the structural, optical properties, and IV characteristics of n-AgInSe2/p-Si heterojunctions
H Shaban, MA Mahdy, SH Moustafa… - Materials Science and …, 2023 - Elsevier
The influence of substrate temperatures T sub (300–573 K) on the structure, optical, and IV
electrical properties of nanostructured AgInSe 2 thin films has been studied. The thermal …
electrical properties of nanostructured AgInSe 2 thin films has been studied. The thermal …
Surface activation of Si-based Schottky diodes by bacterial biosynthesized AgInSe2 trimetallic alloy nanoparticles with evidenced negative capacitance and enhanced …
Semiconductor surface activation aims to modify the surface characteristics of a
semiconductor material, such as its work function, surface energy, and chemical composition …
semiconductor material, such as its work function, surface energy, and chemical composition …
Formation of noncrystalline GeSeSn/c-Si heterojunction: electronic and optoelectronic studies
AAA Darwish, HAM Ali - Physica B: Condensed Matter, 2019 - Elsevier
Noncrystalline GeSeSn film was manufactured on a c-Si wafer by vacuum evaporation to
create GeSeSn/c-Si heterojunction. X-ray diffraction (XRD) and scanning electron …
create GeSeSn/c-Si heterojunction. X-ray diffraction (XRD) and scanning electron …
[PDF][PDF] The Temperature-Dependent Current-Voltage Characteristics of n-AgInSe2/p-Si Heterojunction Diode
n-AgInSe 2/p-Si heterojunction diode was fabricated by a successive layer deposition of
AgInSe 2 thin film on p-type Si. The ideality factor and saturation current of the diode …
AgInSe 2 thin film on p-type Si. The ideality factor and saturation current of the diode …