In this paper, we have tried to elucidate the variation of structural, electronic, and
thermodynamic properties of glasslike Na2GeO3 under compressive isotropic pressure …

Third-order nonlinear optical properties of Ge_10As_xTe_90-x chalcogenide glasses were
investigated utilizing the Z-scan method at the mid-infrared wavelengths of 2.5 and 3.0 µm …

In this paper, we present interesting results on the quantification of photodarkening (PD),
photobleaching (PB) and transient PD (TPD) in a-GexAs35− xSe65 thin films as a function of …

In the upcoming process to overcome the limitations of the standard von Neumann
architecture, synaptic electronics is gaining a primary role for the development of in-memory …

Reversible amorphous to crystalline phase transition introduces high contrast in the optical
and electrical properties of chalcogenide glasses. This effect can be utilized by a designated …

The acousto‐optic parameters of Ge10As90− xTex (x= 30, 40, 50, 60, 70 mol%) and
Ge10As20Te70− ySey (y= 20, 30, 40, 50 mol%) glasses, were studied systematically to …

We have prepared Ge x Se 10 Te 90-x glasses with a composition of x from 17.5 to 26.25
and measured their properties using various diagnosis tools. It was found that, all the …

Research on phase change materials is predominantly focused on their application as
memory devices or for temperature control which requires low phase change temperature …

In this article, we quest for understanding the temperature dependent optical modes present
in a-Ge x As 35− x Se 65 thin films. Strikingly, temperature dependent Raman spectra …

Conductive bridge resistance change (CBRAM) memory devices are one of the premier
emerging technologies for non‐volatile memory. The application of these devices could …