Materials featuring anomalous suppression of density fluctuations over large length scales
are emerging systems known as disordered hyperuniform. The underlying hidden order …

We show that a relatively simple top-down fabrication can be used to locally deform
germanium in order to achieve uniaxial tensile strain of up to 4%. Such high strain values …

We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge
layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are …

SiGe nanostructures on Ge membranes have been fabricated by electron beam lithography
and anisotropic wet-chemical etching, starting from SiGe/Ge heterostructures epitaxially …

Ge 1-x Sn x films with Sn content of up to 12% were grown on Ge substrates using
magnetron sputter epitaxy. The Ge 0.88 Sn 0.12 film grown in a pure Ar atmosphere was …

Germanium bridges and membranes have been fabricated by lithography and wet-
anisotropic chemical etching from SiGe/Ge heterostructures epitaxially deposited on Si …

Functionalized scanning probe tips hold great promise for the controlled delivery of signals
from and to selected nanoscale volumes. Here, a new nanotechnological approach for the …

The monolithic integration of photonic functionality into silicon microtechnology is widely
advanced. Yet, there is no final solution for the realization of a light source compatible with …

The nucleation and the evolution of dislocations in SiGe/Si (001) films can be controlled and
confined along stripes aligned along pits carved in the substrate, leaving micrometric …

In this work we will show how local substrate patterning leads to a long range controlled
propagation of dislocations in SiGe films grown on Si (001) substrates. Dislocations …