Abstract Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor material which has
several advantages such as higher maximum electric field, lower ON-state resistance …

Recent advancements in the silicon carbide (SiC) power semiconductor technology offer
improvements for high-power converters, where today silicon (Si) devices are still dominant …

Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have
the potential to increase the power density in power electronics converters compared to the …

While silicon carbide (SiC) MOSFET is more popular for medium-voltage power
semiconductor devices today, the SiC BJT is still an attractive candidate for high-power, high …

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-
nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching …