Common II-VI compound semiconducting materials are stable thermodynamically with
zincblende phase, while the II-O materials such as zinc oxide (ZnO) and beryllium oxide …

Thickness-dependent stress relaxation and its unreported effect on optical band gap of Al-
doped ZnO thin films have been investigated. The thinnest film (∼ 84 nm) had a stress of …

A careful and wide comparison between Al and Ga as substitutional dopants in the ZnO
wurtzite structure is presented. Both cations behave as n-type dopants and their inclusion …

We present exciton-related optical studies of cadmium sulfide (CdS) nanobelts.
Photoluminescence (PL) properties of CdS nanobelts are analyzed by using high spectral …

Ultrathin zinc oxide (ZnO) films with thickness down to several nanometers have been
fabricated by atomic layer deposition. The chemical composition, surface morphology …

This paper describes a strong piezoelectric carrier confinement at a ZnO/Zn 0.6 Mg 0.4 O
heterointerface grown on an a-plane sapphire substrate by molecular beam epitaxy. A …

Epitaxial ZnO thin films with different orientations have been grown by laser molecular beam
epitaxy on (001)-,(011)-, and (111)-orientated SrTiO3 single-crystal substrates. The growth …

This research article presents a comprehensive first-principles study on the piezoelectric
properties of Wurtzite Aluminum Nitride (AlN) films under in-plane strain conditions. By …

Nanoporous ZnO thin films presenting a tunable nanostructure and photoluminescence (PL)
were grown by plasma enhanced vapor deposition on surface oxidized Si substrates. These …

The initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO
thin films prepared by pulsed laser deposition on sapphire (0001) substrates were …