A 32 nm single-ended single-port 7T static random access memory for low power utilization

B Rawat, P Mittal - Semiconductor Science and Technology, 2021 - iopscience.iop.org
In this paper, a seven-transistor static random access memory (SRAM) bit cell with a single
bitline architecture is proposed. This cell is designed at 32 nm and is operational at 300 mV …

Power optimized SRAM cell with high radiation hardened for aerospace applications

G Prasad, BC Mandi, M Ali - Microelectronics Journal, 2020 - Elsevier
The SRAM cells suffer from soft errors under high radiation environment like aerospace and
satellite applications. Few radiations hardened based popular cells are 12T Dice and 12T …

A comprehensive analysis of different 7T SRAM topologies to design a 1R1 W bit interleaving enabled and half select free cell for 32 nm technology node

B Rawat, P Mittal - Proceedings of the Royal Society A, 2022 - royalsocietypublishing.org
In this paper, a single-ended, dual port, 1R1 W seven transistor-based static random access
memory bit cell is presented. The cell is designed based on a detailed review of various pre …

Design of radiation-hardened memory cell by polar design for space applications

L Hao, L Liu, Q Shi, B Qiang, Z Li, N Liu, C Dai… - Microelectronics …, 2023 - Elsevier
This paper proposed a radiation-hardened memory cell (RHMC12T) by polar design for
space applications. The proposed cell has the following advantages:(1) it can tolerate all …

Single-ended 10T SRAM cell with high yield and low standby power

E Shakouri, B Ebrahimi, N Eslami… - Circuits, Systems, and …, 2021 - Springer
This paper introduces a 10T single-ended SRAM cell with high stability and low static power.
The read static noise margin is augmented by using a Schmitt-trigger inverter and …

A 1.2 V, highly reliable RHBD 10T SRAM cell for aerospace application

SS Dohar, RK Siddharth… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this article, a highly reliable radiation-hardened-by-design (RHBD) 10T static random
access memory (SRAM) cell is proposed. In space, the impact of alpha particles and cosmic …

Area optimization techniques for high-density spin-orbit torque MRAMs

Y Seo, KW Kwon - Electronics, 2021 - mdpi.com
This paper presents area optimization techniques for high-density spin-orbit torque magnetic
random-access memories (SOT-MRAMs). Although SOT-MRAM has many desirable …

Investigation of CNTFET based energy efficient fast SRAM cells for edge AI devices

Y Alekhya, U Nanda - Silicon, 2022 - Springer
A novel reduced power with enhanced speed (RPES) technique for Static Random Access
Memory (SRAM) topologies using Carbon Nano Tube Field Effect Transistors (CNTFETs) …

Ultra High-Density SOT-MRAM Design for Last-Level On-Chip Cache Application

Y Seo, KW Kwon - Electronics, 2023 - mdpi.com
This paper presents ultra high-density spin-orbit torque magnetic random-access memory
(SOT-MRAM) for last-level data cache application. Although SOT-MRAM has many …

A novel charge recycle read write assist technique for energy efficient and fast 20 nm 8T-SRAM array

D Nayak, DP Acharya, PK Rout, U Nanda - Solid-State Electronics, 2018 - Elsevier
The read instability of conventional 6T-SRAM cell has made the 8T-SRAM cell a substitute
for high data reliability. But the single ended nature of read operation demands a complete V …