A 32 nm single-ended single-port 7T static random access memory for low power utilization
In this paper, a seven-transistor static random access memory (SRAM) bit cell with a single
bitline architecture is proposed. This cell is designed at 32 nm and is operational at 300 mV …
bitline architecture is proposed. This cell is designed at 32 nm and is operational at 300 mV …
Power optimized SRAM cell with high radiation hardened for aerospace applications
The SRAM cells suffer from soft errors under high radiation environment like aerospace and
satellite applications. Few radiations hardened based popular cells are 12T Dice and 12T …
satellite applications. Few radiations hardened based popular cells are 12T Dice and 12T …
A comprehensive analysis of different 7T SRAM topologies to design a 1R1 W bit interleaving enabled and half select free cell for 32 nm technology node
In this paper, a single-ended, dual port, 1R1 W seven transistor-based static random access
memory bit cell is presented. The cell is designed based on a detailed review of various pre …
memory bit cell is presented. The cell is designed based on a detailed review of various pre …
Design of radiation-hardened memory cell by polar design for space applications
L Hao, L Liu, Q Shi, B Qiang, Z Li, N Liu, C Dai… - Microelectronics …, 2023 - Elsevier
This paper proposed a radiation-hardened memory cell (RHMC12T) by polar design for
space applications. The proposed cell has the following advantages:(1) it can tolerate all …
space applications. The proposed cell has the following advantages:(1) it can tolerate all …
Single-ended 10T SRAM cell with high yield and low standby power
This paper introduces a 10T single-ended SRAM cell with high stability and low static power.
The read static noise margin is augmented by using a Schmitt-trigger inverter and …
The read static noise margin is augmented by using a Schmitt-trigger inverter and …
A 1.2 V, highly reliable RHBD 10T SRAM cell for aerospace application
SS Dohar, RK Siddharth… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this article, a highly reliable radiation-hardened-by-design (RHBD) 10T static random
access memory (SRAM) cell is proposed. In space, the impact of alpha particles and cosmic …
access memory (SRAM) cell is proposed. In space, the impact of alpha particles and cosmic …
Area optimization techniques for high-density spin-orbit torque MRAMs
Y Seo, KW Kwon - Electronics, 2021 - mdpi.com
This paper presents area optimization techniques for high-density spin-orbit torque magnetic
random-access memories (SOT-MRAMs). Although SOT-MRAM has many desirable …
random-access memories (SOT-MRAMs). Although SOT-MRAM has many desirable …
Investigation of CNTFET based energy efficient fast SRAM cells for edge AI devices
A novel reduced power with enhanced speed (RPES) technique for Static Random Access
Memory (SRAM) topologies using Carbon Nano Tube Field Effect Transistors (CNTFETs) …
Memory (SRAM) topologies using Carbon Nano Tube Field Effect Transistors (CNTFETs) …
Ultra High-Density SOT-MRAM Design for Last-Level On-Chip Cache Application
Y Seo, KW Kwon - Electronics, 2023 - mdpi.com
This paper presents ultra high-density spin-orbit torque magnetic random-access memory
(SOT-MRAM) for last-level data cache application. Although SOT-MRAM has many …
(SOT-MRAM) for last-level data cache application. Although SOT-MRAM has many …
A novel charge recycle read write assist technique for energy efficient and fast 20 nm 8T-SRAM array
The read instability of conventional 6T-SRAM cell has made the 8T-SRAM cell a substitute
for high data reliability. But the single ended nature of read operation demands a complete V …
for high data reliability. But the single ended nature of read operation demands a complete V …