Morphology characterization and growth of GaAs nanowires on Selective-area substrates
LN Zeng, L Li, Y Yang, Z Liu, ZJ Li, Z Zhao… - Chemical Physics …, 2021 - Elsevier
Gold (Au)-catalyzed and catalyst-free gallium arsenide (GaAs) nanowires (NWs) were grown
on GaAs substrates with mask patterns by metal–organic chemical vapor deposition …
on GaAs substrates with mask patterns by metal–organic chemical vapor deposition …
Silver catalyzed growth of In x Ga 1− x As nanowires on Si (001) by metal–organic chemical vapor deposition
We report the growth of InxGa1− xAs nanowires on Si (100) substrates by the metal–organic
chemical vapor deposition technique in a one-step process using silver nanoparticles as …
chemical vapor deposition technique in a one-step process using silver nanoparticles as …
Axial heterostructure of Au-catalyzed InGaAs/GaAs nanowires grown by metal-organic chemical vapor deposition
H Yuan, L Li, Z Li, Y Wang, Y Qu, X Ma, G Liu - Chemical Physics Letters, 2018 - Elsevier
Abstract Nanowires (NWs) of GaAs and InGaAs/GaAs axial heterostructure are fabricated by
metal-organic chemical vapor deposition (MOCVD) following the vapor-liquid-solid (VLS) …
metal-organic chemical vapor deposition (MOCVD) following the vapor-liquid-solid (VLS) …
[HTML][HTML] GaAs/InGaAs 异质结构纳米线定向生长的研究进展
曾丽娜， 李林， 李再金， 乔忠良， 曲轶， 彭鸿雁 - Optoelectronics, 2020 - hanspub.org
GaAs/InGaAs 异质结构纳米线具有直接带隙, 载流子迁移率高等优点, 在半导体激光器,
场效应晶体管, 太阳能电池及红外光探测器等光电子器件领域具有广阔的应用前景 …
场效应晶体管, 太阳能电池及红外光探测器等光电子器件领域具有广阔的应用前景 …
Photonic Nanodevices and Technologies against Light Pollution
EP da Silva, EH Fragal, EDP Duarte… - … for Light Pollution …, 2022 - taylorfrancis.com
Even ancient civilizations that have no scientific knowledge, recognized the key role and
importance of the light for their lives. As time passed by, technological development led us to …
importance of the light for their lives. As time passed by, technological development led us to …
An analysis of the growth of silver catalyzed InxGa1− xAs nanowires on Si (100) by metal organic chemical vapor deposition
A model is proposed here to understand the nucleation of III–V semiconductor nanowires
(NW). Whereas the classical nucleation theory is not adequately sufficient in explaining the …
(NW). Whereas the classical nucleation theory is not adequately sufficient in explaining the …
Fundamental Limiting Efficiency and Intrinsic Loss Components of Quantum-Wire Intermediate-Band Solar Cells
Z Arefinia, DP Samajdar - Physical Review Applied, 2020 - APS
Quantum-wire intermediate-band solar cells (QW IBSCs) are good candidates for breaking
the Shockley-Queisser limit; however, there are a few studies of them. In this paper, we …
the Shockley-Queisser limit; however, there are a few studies of them. In this paper, we …
Effect of Substrate Orientation on the Growth Direction of In x Ga1-x As Nanowires (NWs)
We have grown the In x Gal-x As NWs on GaAs (lll), GaAs (100) and Si (lll) substrates via
Vapor-Solid-Solid (VSS) mode using MOCVD. We observed that the cylindrical NWs grow …
Vapor-Solid-Solid (VSS) mode using MOCVD. We observed that the cylindrical NWs grow …
[PDF][PDF] Research Progress on GaAs/InGaAs Heterostructure Nanowires Directional Epitaxy Growth
L Zeng, L Li, Z Li, Z Qiao, Y Qu, H Peng - 2020 - pdf.hanspub.org
Semiconductor nanowires (NWs) have potential applications in optoelectronic devices such
as semiconductor lasers, nanowire-field effect transistors, solar cells and infrared …
as semiconductor lasers, nanowire-field effect transistors, solar cells and infrared …
The energy due to confinement of one-dimensional cylindrical quantum wire
We have determined the energy due to confinement of one-dimensional cylindrical quantum
wire by solving Schrödinger's equation. By considering some boundaries conditions, the …
wire by solving Schrödinger's equation. By considering some boundaries conditions, the …