Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …

We review the current understanding of intrinsic electron and hole trapping in insulating
amorphous oxide films on semiconductor and metal substrates. The experimental and …

Understanding the relation between the time-dependent resistance drift in the amorphous
state of phase-change materials and the localised states in the band gap of the glass is …

We use a multi-scale modeling to study the time-dependent dielectric breakdown of an
amorphous (a-) HfO 2 insulator in a metal–oxide–metal capacitor. We focus on the role …

Polarons are localized electronic states that occur in many semiconductors. Modeling
polarons at the quantum or atomic scale is often performed using electronic structure …

Dielectric oxide films in electronic devices undergo significant structural changes during
device operation under bias. These changes are usually attributed to aggregation of oxygen …

We present a microscopic breakdown (BD) model in which chemical bonds are weakened
by carrier injection and trapping into pre-existing structural defects (precursors) and by the …

Understanding the effect of electric fields on defect creation and diffusion in metal oxides is
of fundamental importance for developing accurate models of oxide degradation in …

Abstract The HfO 2/NiO nanocomposite films are fabricated by sol-gel spin-coating method
to investigate the bending effect on resistive switching of pn heterojunction. Reliable bipolar …

We investigate the physical origins of endurance fatigue in silicon channel-based
ferroelectric field-effect transistor (Si FeFETs) with TiN/Hf0. 5Zr0. 5O2/SiOx/Si gate-stacks …