In this article, a charge-plasma (CP)-based gate-all-around (GAA) silicon vertical nanowire
tunnel field-effect transistor (NWTFET) is proposed. The effects of interface trap charges …

To overcome the problem of fabrication complexity and to reducei the cost of microelectronic
devices, a new concept of dual-material control gate with dual-oxide tunnel field-effect …

In this review, we explored the modern development of schottky field effect transistor (SK
FET) structures and the improvement of sensitivity of nanowire sensors using dielectric …

Influence of Gaussian doping in transistor regions, doping gradient step size (σ), interface
trap charges (ITC), and temperature on DC, Analog, and Linearity performance of Ge …

In this review, we discussed highly sensitive biosensor devices which is having a more
attractive, wide scope and development in the sensing field. Biosensor devices can detect …

A dielectric modulated (DM) dual-sided dopingless (DL) GaAs 0.5 Sb 0.5/In 0.53 Ga 0.47 As
hetero-junction (HJ) Tunnel FET (DM-DDL-HTFET) based label-free biosensor architecture …

In this paper, a novel Dual-Source Elevated-Channel Dopingless TFET (DSEC-DLTFET) is
proposed to enhance the dc and analog/high-frequency (HF) performance of the device …

In this paper, the performance of dual-material stacked gate oxide-source dielectric pocket-
tunnel field-effect transistor (DMSGO-SDP-TFET) has been investigated by considering fixed …

An improved Chimps optimizer algorithm is proposed in this paper and is applied for the
performance optimization of tunnel FET architectures for use in low power VLSI circuits. The …

Tunnel field-effect transistors (TFETs) have shown attractive device performance making
them a potential candidate to replace MOSFETs in future technologies. However, the …