Statistical design optimization of FinFET SRAM using back-gate voltage

B Ebrahimi, M Rostami, A Afzali-Kusha… - IEEE Transactions on …, 2010 - ieeexplore.ieee.org
In this paper, an optimal approach for the design of 6-T FinFET-based SRAM cells is
proposed. The approach considers the statistical distributions of gate length and silicon …