Co-doping: an effective strategy for achieving stable p-type ZnO thin films

Z Ye, H He, L Jiang - Nano Energy, 2018 - Elsevier
ZnO is one of the most important functional materials with a wide direct band gap, large
exciton binding energy, and facile growth of high quality nanostructures, which make it very …

Mechanism of converting n-type to p-type conductivity in ZnO nanorods array films co-implanted with nitrogen and lithium ions

A Das, D Basak - Materials Science and Engineering: B, 2023 - Elsevier
Here, we report a stable p-type conductivity in aqueous chemically grown ZnO nanorods
array films co-implanted with N and Li ions. We have successfully achieved p-type …

Stable p-type conduction from Sb-decorated head-to-head basal plane inversion domain boundaries in ZnO nanowires

AB Yankovich, B Puchala, F Wang, JH Seo… - Nano …, 2012 - ACS Publications
We report that Sb-decorated head-to-head (H–H) basal plane inversion domain boundaries
(b-IDBs) lead to stable p-type conduction in Sb-doped ZnO nanowires (NWs) due to Sb and …

The synthesis and characterization of Ag–N dual-doped p-type ZnO: experiment and theory

L Duan, P Wang, X Yu, X Han, Y Chen… - Physical Chemistry …, 2014 - pubs.rsc.org
Ag–N dual-doped ZnO films have been fabricated by a chemical bath deposition method.
The p-type conductivity of the dual-doped ZnO:(Ag, N) is stable over a long period of time …

Deposition of Na–N dual acceptor doped p-type ZnO thin films and fabrication of p-ZnO:(Na, N)/n-ZnO: Eu homojunction

R Swapna, MCS Kumar - Materials Science and Engineering: B, 2013 - Elsevier
Sodium and nitrogen dual acceptor doped p-type ZnO (ZnO:(Na, N)) films have been
prepared by spray pyrolysis technique at a substrate temperature of 623 K. The ZnO:(Na, N) …

The origin of the∼ 274 cm− 1 additional Raman mode induced by the incorporation of N dopants and a feasible route to achieve p-type ZnO: N thin films

P Zhang, C Kong, W Li, G Qin, Q Xu, H Zhang… - Applied Surface …, 2015 - Elsevier
Abstract Nitrogen doped ZnO films (ZnO: N) were deposited on quartz glass substrates by
radio-frequency magnetron sputtering technique with various N 2 flow rate mixed with Ar …

Characterization and doping effects study of high hole concentration Li-doped ZnO thin film prepared by sol–gel method

N Bagheri, MHM Ara, N Ghazyani - Journal of Materials Science: Materials …, 2016 - Springer
In this study, lithium-doped p-type ZnO thin film was achieved by applying optimized
parameters such as surfactant concentration and annealing temperature in sol–gel method …

Deposition of the low resistive Ag–N dual acceptor doped p-type ZnO thin films

R Swapna, MCS Kumar - Ceramics International, 2013 - Elsevier
Nanocrystalline Ag and N dual-acceptor doped zinc oxide (ZnO:(Ag, N)) films were
deposited on glass substrates by the spray pyrolysis technique. The Hall measurement, X …

Effect of annealing atmosphere on structural and optical properties of Nd: ZnO thin films

TP Rao, SG Raj, MCS Kumar - Procedia materials science, 2014 - Elsevier
Abstract Nd doped ZnO (Nd: ZnO) thin films were deposited on glass substrate using spray
pyrolysis technique. All the samples were annealed in various annealing atmospheres. The …

Self-compensation reduction as first step of p-type ZnO synthesis

T Jannane, M Manoua, N Fazouan, A El Hichou… - Superlattices and …, 2020 - Elsevier
In this work, we used a new strategy, based on the reduction of self-compensation, to
synthesize p-type ZnO thin films. This new protocol is based on the control of intrinsic defects …