Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Semiconductor nanowires (NWs) have been studied extensively for over two decades for
their novel electronic, photonic, thermal, electrochemical and mechanical properties. This …

Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

The conversion of solar energy into hydrogen via water splitting process is one of the key
sustainable technologies for future clean, storable, and renewable source of energy …

We report on the first demonstration of stable photoelectrochemical water splitting and
hydrogen generation on a double-band photoanode in acidic solution (hydrogen bromide) …

Three-dimensional hierarchical nanostructures were synthesized by the halide chemical
vapor deposition of InGaN nanowires on Si wire arrays. Single phase InGaN nanowires …

Localized surface plasmon resonance (LSPR) is shown to be effective in trapping light for
enhanced light absorption and hence performance in photonic and optoelectronic devices …