AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …

All-photonic integrated circuits are promising platforms for future systems beyond the
limitation of Moore's law. Over the last several decades, one-dimensional (1D) nanowires …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN
nanowires grown by MOCVD. The fabrication relies on polymer encapsulation, nanowire lift …

We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with
diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase …

Underwater wireless optical communication (UWOC) is a wireless communication
technology that uses visible light to transmit data in underwater environment. Compared to …

Plasmonic nanostructures can achieve subdiffraction‐limit light confinement with enhanced
electric fields. By taking advantage of the light‐confinement effect, various plasmonic …

This review presents the recent research efforts and developments in photoactive materials
for sensing ppb concentrations of NO2. It also includes the fundamentals of photoactivated …

The high speed on–off performance of GaN-based light-emitting diodes (LEDs) grown in c-
plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric …