The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces
We investigate the formation of extended defects during molecular-dynamics (MD)
simulations of GaN and InGaN growth on (0001) and (11 20) wurtzite-GaN surfaces. The …
simulations of GaN and InGaN growth on (0001) and (11 20) wurtzite-GaN surfaces. The …
Bimetal Thin Film, Semiconductors, and 2D Nanomaterials in SPR Biosensors: An Approach to Enhanced Urine Glucose Sensing
This work introduces a systematic approach for the development of Kretschmann
configuration-based biosensors designed for non-invasive urine glucose detection. The …
configuration-based biosensors designed for non-invasive urine glucose detection. The …
The investigation of molecular beam epitaxy growth of GaN by molecular dynamics simulation
The epitaxial growth of GaN on AlN substrate is investigated by using the molecular
dynamics simulation. The effects of substrate rotating speed, the effusion source inclined …
dynamics simulation. The effects of substrate rotating speed, the effusion source inclined …
Crystallization behavior and defect analysis on induction growth of hexagonal GaN in isothermal relaxation
Y Wang, L Li, T Gao, Y Gao, Y Liu, Z Zhang, Q Chen… - Vacuum, 2022 - Elsevier
Gallium nitride (GaN) plays a vital role in the devices of many fields, including
communication, display, and lighting. The key to fabricating high-performance GaN devices …
communication, display, and lighting. The key to fabricating high-performance GaN devices …
Simulation study on the diversity and characteristics of twin structures in GaN
M Tan, T Gao, Q Xiao, Y Gao, Y Liu, Q Xie… - Superlattices and …, 2021 - Elsevier
Gallium nitride (GaN) is a promising material for high-frequency and high-power electronics
owing to its high thermal stability, wide bandgap, and high breakdown voltage …
owing to its high thermal stability, wide bandgap, and high breakdown voltage …
Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)
Limiting buffer layer current leakage is essential for the realization of high breakdown fields
in GaN-on-Si high electron mobility transistors (HEMTs). In this report, we demonstrate the …
in GaN-on-Si high electron mobility transistors (HEMTs). In this report, we demonstrate the …
Droplet controlled growth dynamics in molecular beam epitaxy of nitride semiconductors
M Azadmand, L Barabani, S Bietti, D Chrastina… - Scientific Reports, 2018 - nature.com
The growth dynamics of Ga (In) N semiconductors by Plasma-Assisted Molecular Beam
Epitaxy (PAMBE) at low temperatures (T= 450° C) is here investigated. The presence of …
Epitaxy (PAMBE) at low temperatures (T= 450° C) is here investigated. The presence of …
[HTML][HTML] Mechanisms of GaN quantum dot formation during nitridation of Ga droplets
We have examined the formation mechanisms of GaN quantum dots (QDs) via annealing of
Ga droplets in a nitrogen flux. We consider the temperature-and substrate-dependence of …
Ga droplets in a nitrogen flux. We consider the temperature-and substrate-dependence of …
Molecular dynamics for cooling rate dependence of solidification of aluminum nitride
The solidification process of aluminum nitride was investigated by molecular dynamics
simulation. It was observed that crystals started to form when the temperature was cooled …
simulation. It was observed that crystals started to form when the temperature was cooled …