The growing need for increasingly miniaturized devices has placed high importance and
demands on nanofabrication technologies with high-quality, low temperatures, and low-cost …

Two-dimensional transition metal nitrides offer intriguing possibilities for achieving novel
electronic and mechanical functionality owing to their distinctive and tunable bonding …

This work developed a plasma atomic layer etching (ALE) process for molybdenum (Mo)
with surface fluorination and ion bombardment. The Mo surface was fluorinated with CHF 3 …

With the development of the third generation of semiconductor devices, it is essential to
achieve precise etching of gallium nitride (GaN) materials that is close to the atomic level …

With the continued miniaturization of electronic devices, atomic layer etching (ALE)
technique has attracted extensive attention. In plasma-ALE process, the etching energy …

This paper studied an atomic layer etching (ALE) technique with a surface treatment function
for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted …

The plasma atomic layer etching (ALE) process for Ru was developed with surface
fluorination and ion bombardment. We employed two methods for surface fluorination:(i) …

GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are
potential candidates for the next generation of high-power electronics. To further reduce …

The growing need for increasingly miniaturized devices has placed high importance and
demands on nanofabrication technologies with high-quality, low temperatures, and low-cost …