Impact of stress effect on triple material gate step-FinFET with DC and AC analysis
RR Das, A Chowdhury, A Chakraborty… - Microsystem Technologies, 2020 - Springer
Step-FinFET is an improvisation in various electrical characteristics with a modified
mechanism. The gate length 20 nm, 15 nm, 20 nm has allowed an acceptable driving …
mechanism. The gate length 20 nm, 15 nm, 20 nm has allowed an acceptable driving …
First-principles-based quantum transport simulations of monolayer indium selenide FETs in the ballistic limit
Y Ahn, M Shin - IEEE Transactions on Electron Devices, 2017 - ieeexplore.ieee.org
We investigate the ballistic performance of monolayer indium selenide (InSe) n-type FETs,
benchmarking with monolayer WS2, WSe2, and black phosphorus FETs. We utilize first …
benchmarking with monolayer WS2, WSe2, and black phosphorus FETs. We utilize first …
Current relation of single energy level Graphene through considering defects and energy broadening
NK Singh, S Maity - Materials Today: Proceedings, 2017 - Elsevier
Graphene consist of sheet of carbon atoms bonded in sp2 manner of hexagonal lattice
structure offers a number of uses in electronic application with number of desirable …
structure offers a number of uses in electronic application with number of desirable …