A review of the top of the barrier nanotransistor models for semiconductor nanomaterials
The modelling and simulation of low-dimensional nanoelectronic devices is important,
because the semiconductor industry has scaled transistors down to the sub-10 nm regime …
because the semiconductor industry has scaled transistors down to the sub-10 nm regime …
The ultimate ballistic drift velocity in carbon nanotubes
Abstract jats: pThe carriers in a carbon nanotube (CNT), like in any quasi-1-dimensional
(Q1D) nanostructure, have analog energy spectrum only in the quasifree direction; while the …
(Q1D) nanostructure, have analog energy spectrum only in the quasifree direction; while the …
Low-dimensional modelling of n-type doped silicene and its carrier transport properties for nanoelectronic applications
Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor
that might be compatible with present silicon fabrication technology. Similar to graphene …
that might be compatible with present silicon fabrication technology. Similar to graphene …
[图书][B] Nanoelectronics: Quantum engineering of low-dimensional nanoensembles
VK Arora - 2018 - taylorfrancis.com
Brings the Band Structure of Carbon-Based Devices into the Limelight A shift to carbon is
positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly …
positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly …
Current–voltage characteristics of a silicon nanowire transistor
The nanowires and nanotubes are being considered as the best candidates for high-speed
applications. It is shown that the high mobility does not always lead to higher carrier velocity …
applications. It is shown that the high mobility does not always lead to higher carrier velocity …
The high-field drift velocity in degenerately-doped silicon nanowires
The charge transport in nanowires suitable for high-speed applications depends on charge
carrier's mobility and saturation velocity in the conducting channel. It is shown that the high …
carrier's mobility and saturation velocity in the conducting channel. It is shown that the high …
High-field transport in a graphene nanolayer
High-field electron transport properties in a two-dimensional nanolayer are studied by an
application of the anisotropic nonequilibrium distribution function, a natural extension of the …
application of the anisotropic nonequilibrium distribution function, a natural extension of the …
Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor
We present a novel analytical modeling of a zigzag single-walled semiconducting carbon
nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top …
nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top …
Review of Selected Quantum Measurements Applied to Embedded Quantum Well in Nanoscale Transistor
J Belhassen, A Chelly - IEEE Journal of Selected Topics in …, 2024 - ieeexplore.ieee.org
The fabrication of nanoelectronic and nanophotonic devices based on embedded quantum
structures has become feasible over the last decades, and the field is continuously …
structures has become feasible over the last decades, and the field is continuously …
The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor
The current at the onset of saturation in a metal-oxide-semiconductor field-effect transistor
(MOSFET) is shown to be limited by the drain velocity that increases toward its saturation …
(MOSFET) is shown to be limited by the drain velocity that increases toward its saturation …