Radiation damage in wide and ultra-wide bandgap semiconductors
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …
devices that are used in the automotive, wireless, and industrial power markets, but their …
Radiation effects in algan/gan hemts
An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID)
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs
CA Grome, W Ji - Electronics, 2024 - mdpi.com
Radiation hardening of power MOSFETs (metal oxide semiconductor field effect transistors)
is of the highest priority for sustaining high-power systems in the space radiation …
is of the highest priority for sustaining high-power systems in the space radiation …
Effects of breakdown voltage on single-event burnout tolerance of high-voltage SiC power MOSFETs
DR Ball, KF Galloway, RA Johnson… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
Ion-and terrestrial neutron-induced single-event burnout (SEB) data indicate that a thicker,
more lightly doped epitaxial (epi) region significantly increases the threshold at which ion …
more lightly doped epitaxial (epi) region significantly increases the threshold at which ion …
Impact of terrestrial neutrons on the reliability of SiC VD-MOSFET technologies
C Martinella, RG Alía, R Stark… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
Accelerated terrestrial neutron irradiations were performed on different commercial SiC
power MOSFETs with planar, trench, and double-trench architectures. The results were used …
power MOSFETs with planar, trench, and double-trench architectures. The results were used …
Radiation damage in the ultra-wide bandgap semiconductor Ga2O3
We present a review of the published experimental and simulation radiation damage results
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
Impact of varied buffer layer designs on single-event response of 1.2-kV SiC power MOSFETs
J Lu, J Liu, X Tian, H Chen, Y Tang… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In this article, the single-event response of the 1.2-kV silicon-carbide (SiC) power MOSFETs
with varied buffer layer designs is investigated by the 2-D numerical simulations. The …
with varied buffer layer designs is investigated by the 2-D numerical simulations. The …
Heavy-ion microbeam studies of single-event leakage current mechanism in SiC VD-MOSFETs
C Martinella, T Ziemann, R Stark… - … on Nuclear Science, 2020 - ieeexplore.ieee.org
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in
commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with …
commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with …
First-principles approach to closing the 10–100 eV gap for charge-carrier thermalization in semiconductors
Since the 1960s and the first observations of radiation-induced disruption of electronic
devices in space, the study of the effects of ionizing radiation on electronics has grown into …
devices in space, the study of the effects of ionizing radiation on electronics has grown into …