TID degradation mechanisms in 16-nm bulk FinFETs irradiated to ultrahigh doses
T Ma, S Bonaldo, S Mattiazzo… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk
Si FinFETs at ultrahigh doses. n-and p-FinFETs with several channel lengths are irradiated …
Si FinFETs at ultrahigh doses. n-and p-FinFETs with several channel lengths are irradiated …
Ionizing-radiation response and low-frequency noise of 28-nm MOSFETs at ultrahigh doses
Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and
low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad …
low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad …
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments
S Bonaldo, T Ma, S Mattiazzo, A Baschirotto… - Nuclear Instruments and …, 2022 - Elsevier
Abstract Total-ionizing-dose (TID) mechanisms are evaluated in 16 nm Si bulk FinFETs at
doses up to 1 Grad (SiO 2) for applications in high-energy physics experiments. The TID …
doses up to 1 Grad (SiO 2) for applications in high-energy physics experiments. The TID …
Space tags: Ultra-low-power operation and radiation hardness for passive wireless sensor tags
J Grosinger… - IEEE Microwave …, 2022 - ieeexplore.ieee.org
Space agencies worldwide have a long-term vision of sending human missions to Mars. The
next favorable launch window occurs in 2033, and plans are ongoing to realize such …
next favorable launch window occurs in 2033, and plans are ongoing to realize such …
TID effects in highly scaled gate-all-around Si nanowire CMOS transistors irradiated to ultrahigh doses
Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA)
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
Characterization and modeling of gigarad-TID-induced drain leakage current of 28-nm bulk MOSFETs
This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad
(SiO 2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk …
(SiO 2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk …
Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications
G Termo, G Borghello, F Faccio, S Michelis… - Nuclear Instruments and …, 2024 - Elsevier
The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics
of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total …
of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total …
4H-SiC CMOS transimpedance amplifier of gamma-irradiation resistance over 1 MGy
M Masunaga, S Sato, R Kuwana… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
A transimpedance amplifier (TIA)-with gamma-irradiation resistance of over 1 MGy-based on
a novel 4H-SiC complementary MOS (CMOS) technology was fabricated. This TIA is robust …
a novel 4H-SiC complementary MOS (CMOS) technology was fabricated. This TIA is robust …
Radiation-induced charge trapping in shallow trench isolations of FinFETs
We provide comprehensive experimental data and technology computer-aided design
(TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n …
(TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n …
Influence of fin and finger number on TID degradation of 16-nm bulk FinFETs irradiated to ultrahigh doses
T Ma, S Bonaldo, S Mattiazzo… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
This article investigates the fin-and finger-number dependence of the total ionizing dose
(TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n-and p-FinFETs designed …
(TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n-and p-FinFETs designed …