Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Computational methods for 2D materials: discovery, property characterization, and application design
The discovery of two-dimensional (2D) materials comes at a time when computational
methods are mature and can predict novel 2D materials, characterize their properties, and …
methods are mature and can predict novel 2D materials, characterize their properties, and …
Novel synthesis, properties and applications of emerging group VA two-dimensional monoelemental materials (2D-Xenes)
Two-dimensional materials (2D materials) have been the focal point of recent advanced
research owing to their new properties and probability for enlightening fascinating novel …
research owing to their new properties and probability for enlightening fascinating novel …
Electronic structure and the properties of phosphorene and few-layer black phosphorus
S Fukuoka, T Taen, T Osada - Journal of the Physical Society of …, 2015 - journals.jps.jp
A single atomic layer of black phosphorus, phosphorene, was experimentally realized in
2014. It has a puckered honeycomb lattice structure and a semiconducting electronic …
2014. It has a puckered honeycomb lattice structure and a semiconducting electronic …
Large electronic anisotropy and enhanced chemical activity of highly rippled phosphorene
We investigate the electronic structure and chemical activity of rippled phosphorene induced
by large compressive strains via first-principles calculation. It is found that phosphorene is …
by large compressive strains via first-principles calculation. It is found that phosphorene is …
High-performance sub-10-nm monolayer black phosphorene tunneling transistors
Moore's law is approaching its physical limit. Tunneling field-effect transistors (TFETs) based
on 2D materials provide a possible scheme to extend Moore's lawdown to the sub-10-nm …
on 2D materials provide a possible scheme to extend Moore's lawdown to the sub-10-nm …
[HTML][HTML] Two-dimensional pnictogen for field-effect transistors
Abstract Two-dimensional (2D) layered materials hold great promise for various future
electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D …
electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D …
Modeling of electron devices based on 2-D materials
The advent of graphene and related 2-D materials has attracted the interest of the electron
device research community in the past 14 years. The possibility to boost the transistor …
device research community in the past 14 years. The possibility to boost the transistor …
Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides
H Li, P Xu, J Lu - Nanoscale, 2019 - pubs.rsc.org
The development of air-stable channels with a high on-state current (Ion) is in high demand
for the feasible application of TFETs. Monolayer group IV mono-chalcogenides (ie, GeS …
for the feasible application of TFETs. Monolayer group IV mono-chalcogenides (ie, GeS …
Uptake of formaldehyde onto doped phosphorene nanosheets: A cluster DFT study of single and co-adsorption states
S Gazzari, D Cortes-Arriagada - Journal of Alloys and Compounds, 2020 - Elsevier
To search for novel uptake platforms for the adsorption of toxic formaldehyde (H 2 CO), we
investigate the adsorption properties of intrinsic, Al, and Cu adatom doped-phosphorene …
investigate the adsorption properties of intrinsic, Al, and Cu adatom doped-phosphorene …