Recent advances in ultraviolet photodetectors
Z Alaie, SM Nejad, MH Yousefi - Materials Science in Semiconductor …, 2015 - Elsevier
In recent years, ultraviolet (UV) photodetectors (PDs) have received much attention in the
various field of research due to wide range of industrial, military, biological and …
various field of research due to wide range of industrial, military, biological and …
Wide-bandgap semiconductor ultraviolet photodetectors
Industries such as the automotive, aerospace or military, as well as environmental and
biological research have promoted the development of ultraviolet (UV) photodetectors …
biological research have promoted the development of ultraviolet (UV) photodetectors …
Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm
Y Xie, B Zhang, S Wang, D Wang, A Wang… - Advanced …, 2017 - Wiley Online Library
Photodetectors with excellent detecting properties over a broad spectral range have
advantages for the application in many optoelectronic devices. Introducing imperfections to …
advantages for the application in many optoelectronic devices. Introducing imperfections to …
Enlightening gallium nitride-based UV photodetectors
N Aggarwal, G Gupta - Journal of Materials Chemistry C, 2020 - pubs.rsc.org
This article highlights the emerging demand for gallium nitride (GaN) semiconductor
technology that offers superior optoelectronic properties making it suitable for highly efficient …
technology that offers superior optoelectronic properties making it suitable for highly efficient …
Amorphous MoS2 Photodetector with Ultra-Broadband Response
Z Huang, T Zhang, J Liu, L Zhang, Y Jin… - ACS Applied …, 2019 - ACS Publications
Photodetectors with the ability to detect light over a broad spectral range at room
temperature (RT) are attracting considerable attention because of their wide range of …
temperature (RT) are attracting considerable attention because of their wide range of …
[图书][B] Handbook of nitride semiconductors and devices, GaN-based optical and electronic devices
H Morkoç - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
A highly responsive self‐driven UV photodetector using GaN nanoflowers
N Aggarwal, S Krishna, A Sharma… - Advanced electronic …, 2017 - Wiley Online Library
The rising demand for optoelectronic devices to be operable in adverse environments
necessitates the sensing of ultraviolet (UV) radiation. Here, a self‐driven, highly sensitive …
necessitates the sensing of ultraviolet (UV) radiation. Here, a self‐driven, highly sensitive …
Fast photoconductive responses in organometal halide perovskite photodetectors
F Wang, J Mei, Y Wang, L Zhang… - ACS applied materials …, 2016 - ACS Publications
Inorganic semiconductor-based photodetectors have been suffering from slow response
speeds, which are caused by the persistent photoconductivity of semiconductor materials …
speeds, which are caused by the persistent photoconductivity of semiconductor materials …
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
JW Johnson, RJ Therrien, A Vescan… - US Patent …, 2006 - Google Patents
Gallium nitride material devices and methods of forming the same are provided. The devices
include an electrode-defining layer. The electrode-defining layer typically has a via formed …
include an electrode-defining layer. The electrode-defining layer typically has a via formed …
[PDF][PDF] Полупроводниковые фотоэлектропреобразователи для ультрафиолетовой области спектра
ТВ Бланк, ЮА Гольдберг - Физика и техника полупроводников, 2003 - journals.ioffe.ru
В настоящее время в мире интенсивно развиваются полупроводниковые
фотоэлектропреобразователи для ультрафиолетовой (УФ) области спектра в связи с …
фотоэлектропреобразователи для ультрафиолетовой (УФ) области спектра в связи с …