Highly sensitive self-powered UV-visible photodetector based on ZrO2-RGO nanofibers/n-Si heterojunction
Nanoscale microstructures such as nanofibers (NFs) have the potential to be widely used in
optoelectronics as they minimize the interfacial effects. A low-cost and easily prepared the …
optoelectronics as they minimize the interfacial effects. A low-cost and easily prepared the …
Performance of the illumination dependent electrical and photodiode characteristic of the Al/(GO: PTCDA)/p-Si structures
Ş Karataş, N Berk - Optical Materials, 2022 - Elsevier
In this our study, we fabricated an Al/p-Si metal semiconductor (MS) structure with
perylenetetra carboxylic dianhydride (PTCDA) and graphene oxide (GO) interface. The …
perylenetetra carboxylic dianhydride (PTCDA) and graphene oxide (GO) interface. The …
Photosensing performances of heterojunctions-based photodiodes with novel complex interlayers
In this study, the effects of illumination on the electrical properties as well as the structural,
optical and photo-electrical properties of organic complex-based photodiodes synthesized …
optical and photo-electrical properties of organic complex-based photodiodes synthesized …
Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range
Abstract Au/Ti/HfO 2/n-GaAs MIS (metal/insulating layer/semiconductor) diodes were
fabricated by atomic layer deposition technique and their electrical properties were …
fabricated by atomic layer deposition technique and their electrical properties were …
Temperature dependence of electrical characteristics and interface state densities of Au/n-type Si structures with SnS doped PVC interface
In this study, the electrical properties of Au/(SnS doped PVC)/n–Si structures were
investigated in detail using current/voltage (IV) data in wide temperature range (80–340 K by …
investigated in detail using current/voltage (IV) data in wide temperature range (80–340 K by …
Capacitance, conductance, and dielectric characteristics of Al/TiO2/Si diode
HH Gullu, DE Yildiz - Journal of Materials Science: Materials in Electronics, 2021 - Springer
In this study, electrical properties of the Al/TiO 2/p-Si diode structure with an atomic layer
deposited TiO 2 interface layer are investigated by current–voltage (IV IV), capacitance …
deposited TiO 2 interface layer are investigated by current–voltage (IV IV), capacitance …
Dark and illuminated electrical characteristics of Schottky device with Zn-complex interface layer
In this study, metal/Zn-complex/semiconductor (MPS) Schottky photodiodes are fabricated.
Interface layer is deposited using a metal-nicotinate/nicotinamide mixed ligand [Zn …
Interface layer is deposited using a metal-nicotinate/nicotinamide mixed ligand [Zn …
Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin …
HH Gullu, DE Yildiz - Journal of Materials Science: Materials in Electronics, 2020 - Springer
Abstract Effects of frequency and temperature variations on the electrical properties of Au/Si
3 N 4/n-4H SiC diode were investigated. The diode responses to the change in frequency …
3 N 4/n-4H SiC diode were investigated. The diode responses to the change in frequency …
The structural and optical properties of GO: Temperature-dependent analysis of the electrical properties of Al/GO/p-type Si semiconductor structures
A spin-coating process has been used to generate graphene oxide (GO) thin films on p-type
silicon. The temperature-dependent basic electrical characteristics of Al/GO/p-type Si metal …
silicon. The temperature-dependent basic electrical characteristics of Al/GO/p-type Si metal …
Modification of barrier diode with cationic dye for high power applications
Current-voltage (IV) measurements of Au/methylene blue (MB)/p-Si/Al diode were taken at
room temperature, in the dark and under illumination and also in a wide temperature range …
room temperature, in the dark and under illumination and also in a wide temperature range …